IRFB4137PBF

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	341W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5168pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	125nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	69 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	38A (Tc)
Drain to Source Voltage (Vdss):	300V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IRFB4137PBF Application Field and Working Principle

IRFB4137PBF is a type of power Mosfet transistor. It is commonly referred to as an "n-channel" type and is one of the most popular types of single-gate, power Mosfet transistors. The PBF suffix indicates the package style of this device, with the PBF standing for plastic, bulk-pack flat. The IRFB4137PBF belongs to the IRFB4xxx series manufactured by International Rectifiers (IR).The IRFB4137PBF is a high power, n-channel, enhancement-mode, rack, power MOSFET transistor. It is specifically designed for relay applications in automotive, audio, power electronic devices, and any other applications where high-voltage, low-resistance switching is required. It contains a MOSFET cell with an associated P-channel type, load-switching gate. The main feature of this transistor is the low-resistance of the on-state and the fast switching characteristics.The power handling capability of the IRFB4137PBF is also very impressive, with a rating of 715V, 20A and an on-state resistance of just 0.04ohm. It is also capable of operating at a maximum temperature range of 175°C. This high efficiency power handling allows for more efficient control of the voltage signal and power in the circuit. Additionally, the IRFB4137PBF features the anti-parallel diode protection and a reverse recovery time of just 13nS. In addition to its high switching speeds and high voltage, current and temperature ratings, the IRFB4137PBF also has several other features that make it well suited for use in a variety of applications. The device requires less gate drive current to drive it, which makes it more efficient in its overall power consumption. Its higher input impedance also helps to minimize EMI disturbance, making it ideal for use in industrial processes. Lastly, its tight lead spacing makes the IRFB4137PBF simple to assemble and install in limited spaces.In its basic form, the IRFB4137PBF is an enhancement-mode, n-channel power MOSFET transistor. The IRFB4137PBF features an N-channel structure and consists of a single gate with an associated P-channel load switch. In order to control the voltage signal, the gate must be activated by the external power supply and the voltage signal must be correctly applied to the gate. When the gate is activated and the voltage signal is applied correctly to the gate, current flows through the N-channel, and the device is turned ‘on’. When the gate is deactivated, the current stops and the device is turned ‘off’. In both cases, there is a rapid switch between on and off, making the IRFB4137PBF ideal for applications where high-speed switching is needed.The IRFB4137PBF is widely used in many applications due to its high switching speed, low on-state resistance and its ability to handle high voltage, current and temperature. One of the most common applications is in motor controllers, due to the transistor’s ability to rapidly switch between on and off states. Other common applications include switching high voltage and current in systems with fast switching, such as power supply systems, and in audio applications, due to its superior EMI protection.In conclusion, the IRFB4137PBF is one of the most commonly used single-gate, power MOSFET transistors. It is best suited for applications where high-speed switching, low on-state resistance, high temperature capability and EMI protection are needed. It is often used in motor controllers and switching high voltage and current in power supply and audio systems.

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