IRFB3507PBF

Vgs(th) (Max) @ Id:	4V @ 100µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	190W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3540pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	130nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	8.8 mOhm @ 58A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	97A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRFB3507PBF application field and working principle

The IRFB3507PBF is a high-performance, high-quality enhancement-mode field-effect transistor (FET). The device has been designed to minimize on-state resistance while providing superior switching performance and gate charge. The device is suitable for use in a wide range of switching applications, including high-frequency power conversion, synchronous rectification, motor control and lighting.The IRFB3507PBF is designed for optimum performance in low-voltage, high-current applications. The device utilizes a relatively high threshold voltage of 3.2V, which allows for efficient operation in high-current switching applications. The device has a low gate charge of only 11.4nC, which makes it ideal for high-speed switching applications. The device also has a low leakage current of only 7.7uA, which allows for low static power consumption. The device is rated for 30A of continuous drain current and offers a low on-state resistance of only 10mOhms.The IRFB3507PBF is based on an enhancement-mode MOSFET device, which is also known as a metal–oxide–semiconductor field-effect transistor (MOSFET). The device is constructed of a source terminal, a gate terminal and a drain terminal. These three terminals provide an electric field which is used to control current flow through the device. When the gate terminal is brought to a higher voltage relative to the source, the channel between the source and the drain is “opened”, and current is allowed to flow through the device. This type of operation is known as enhancement-mode. When the gate voltage is reduced, the channel is closed, and the current flow is prevented. This type of operation is known as depletion-mode. The IRFB3507PBF is ideal for use in a variety of applications, including switch-mode power supplies, DC-DC converters, DC motor control, and lighting control. The device is also suitable for use in high-frequency switching applications, such as pulse-width modulation (PWM), synchronous rectification, and high-frequency switching power supplies. The device is designed for use in conjunction with an external logic device, such as a microcontroller or logic integrated circuit. The IRFB3507PBF is a high-quality, high-performance device that can provide excellent performance in a variety of applications. The device has a low gate charge, a low leakage current, and a low on-state resistance. It is suitable for use in a variety of high-frequency switching applications, and is an ideal choice for use in low-voltage, high-current applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description