IRFBF20STRL Allicdata Electronics
Allicdata Part #:

IRFBF20STRL-ND

Manufacturer Part#:

IRFBF20STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 900V 1.7A D2PAK
More Detail: N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surfa...
DataSheet: IRFBF20STRL datasheetIRFBF20STRL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRFBF20STRL is a special type of MOSFET, more specifically known as a single N-channel power MOSFET. This type of device is commonly used for a variety of power management applications, such as switching and power conversion. It features a maximum drain current of 20A, a drain source breakdown voltage of 100V, and a maximum power dissipation of 300W.

The IRFB20STRL is typically comprised of two terminals, the source and the drain. It is the interface between two different electrical circuits. The source terminal is the negative end of the device, where electrons enter the device from an external circuit. The drain terminal is the positive end of the device, and electrons exit the device from this terminal.

At the heart of the device is the MOSFET itself, which consists of an insulated gate and a conducting channel. The gate is responsible for controlling the current flow between the source and drain terminals. It is commonly activated by a voltage signal, and this voltage signal can be either an AC or DC voltage. The conducting channel is formed by the gate and is responsible for the flow of electrons between the source and drain.

The IRFBF20STRL has a number of applications in power management. It is often used in switching circuits to regulate the current flow, as well as in power conversion, providing a controlled and regulated power conversion from one voltage level to another. In addition, this device is often used as a load switch, controlling the current flow between two circuits. It can also be used for general power management, such as providing regulated power to different circuits.

The IRFBF20STRL works on the principle of field-effect-transistors (FETs). Inside the device is an insulated gate which controls the flow of current between the source and drain terminals. When a voltage signal is applied to the gate, it creates an electrical field which then modulates the conductivity of the conductive channel, altering the current flow between the source and drain. The size and strength of the electrical field is determined by the strength of the gate voltage. As such, the transistor can be used to regulate and control the current flow within a circuit.

In summary, the IRFBF20STRL is a single N-channel power MOSFET. It is able to provide controlled and regulated current flows between two circuits and is commonly used in power management applications such as switching and conversion. It works on the principle of field-effect transistors, where the flow of current is modulated through the application of a voltage signal. This device is a highly reliable and versatile transistor, capable of providing a wide range of power management solutions.

The specific data is subject to PDF, and the above content is for reference

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