IRFBC20STRL Allicdata Electronics
Allicdata Part #:

IRFBC20STRL-ND

Manufacturer Part#:

IRFBC20STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 2.2A D2PAK
More Detail: N-Channel 600V 2.2A (Tc) 3.1W (Ta), 50W (Tc) Surfa...
DataSheet: IRFBC20STRL datasheetIRFBC20STRL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRFBC20STRL is an N-Channel Field Effect Transistor, known as an FET, and is an enhancement single-mode, having an insulated gate. It is all made up of silicon and has an operating region that begins at -50⁰C and goes up to +175⁰C with a drain current going up to 21A at 25⁰C.

Integrated into this transistor is a gate-source voltage useable of 20V and a maximum gate‑drain voltage of 12V. It is known for its high-speed switching and this is because of its low capacitance which is only 8.6pF with a maximum of 11.1nC. When its drain voltage is at 25V, it starts to operate at its RDS value.

The IRFBC20STRL’s\' application field is varied. This means its uses range from low frequency up to microwave level operations. The transistor is used in a number of industries such as consumer electronic products, electrical motor control systems, gate drivers, DC /DC convertors, UPS, automotive systems and DC-DC drives. Its saturated drain-source voltage is considerably lower than standard MOSFETs, and its switching speeds are far higher.

This makes it ideal for high current/high frequency switching applications as it works really well with class ‘D’ amplifiers and power management. It is regularly used in power supply circuits and small radios, motor control and other applications which require high switching speed. It can also be used in instrumentation circuits, which require low power and an On/Off switching function.

In terms of its working principle, the IRFBC20STRL is an n-channel type MOSFET which operates in an enhancement mode. This type of FET has three terminals, drain, gate, and source, and behaves as a voltage controlled switch. When a voltage is applied to the gate, it controls the current that moves through the transistor from the drain to the source.

The device finds use in analog and digital circuits, where it is important to be able to switch very high currents or voltages rapidly. The gate’s capacitance helps to ensure that it can do this without requiring a stable charge, since the transistor can quickly respond to an input voltage or current.

The IRFBC20STRL can be used in electrolytic capacitors on the input/output stages, due to its low capacitance characteristics, as well as in high-frequency applications. This includes switching power circuits such as motor controllers and power supplies, which need to be able to quickly switch high voltages efficiently.

In conclusion, the IRFBC20STRL is an N-channel single-mode FET designed to switch high current and voltages. It works well in a variety of applications ranging from consumer electronics, electrical motors, DC/DC converters, power management, to amplifiers. It operates in an enhancement mode and is useful in analog and digital circuits where switching needs to take place quickly.

The specific data is subject to PDF, and the above content is for reference

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