IRFBA1404PPBF

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IRFBA1404PPBF transistors are field-effect transistors (FETs) designed for a wide range of applications. These transistors are n-channel MOSFETs which are made with high-performance materials and robust construction for greater reliability and performance. They are used in both industrial and consumer applications, and are often found in power supplies, motor drivers, battery management systems, and other high-power applications.

The IRFBA1404PPBF is a single-channel, self-triggered FET. This type of transistor operates by the movement of electrons and their interaction with an electric field. A single-channel FET is made up of three terminals labeled gate, drain, and source. The gate terminal connects to the gate voltage and is used to control the amount of current flowing through the transistor. The source terminal is connected to the source voltage and is used to supply the current to the load. The drain terminal is connected to the drain voltage and is used to complete the FET circuit.

The IRFBA1404PPBF has a maximum breakdown voltage of 500 V, an on-state resistance of 2.7 ohms, and an on-state current limit of 33 A. It is rated for continuous operation up to 100 kHz, and can provide peak current pulses up to 150 A. In order to prevent the transistor from experiencing thermal runaway or destruction in over-current applications, the IRFBA1404PPBF is equipped with integrated over-temperature and over-current protection.

The working principle of the IRFBA1404PPBF is based on the effect of an electric field on the movement of electrons. When a voltage is applied to the gate terminal, it generates an electric field between the gate and region between the source and drain. This electric field changes the conductivity of the region, allowing electrons to move through the junction more easily. The more voltage applied to the gate, the more electrons that can move through the junction.

The IRFBA1404PPBF is a versatile transistor well suited for many applications. Its high-power capabilities and robust construction make it a reliable component for industrial and consumer applications. Its integrated protections help ensure that the device is well-protected against thermal runaway and other damage in high-current applications.

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