IRFBC30ASTRLPBF Allicdata Electronics
Allicdata Part #:

IRFBC30ASTRLPBF-ND

Manufacturer Part#:

IRFBC30ASTRLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 3.6A D2PAK
More Detail: N-Channel 600V 3.6A (Tc) 74W (Tc) Surface Mount D2...
DataSheet: IRFBC30ASTRLPBF datasheetIRFBC30ASTRLPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 74W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRFBC30ASTRLPBF is a single N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) optimized for power switching applications. It has a load current rating of 30 Amps and a drain-source voltage rating of 100 Volts. This MOSFET is a popular and versatile choice for applications such as DC-driven motor control, battery charging, and general electronic switching. This article explains the working principle and application field of the IRFBC30ASTRLPBF.

Components of the IRFBC30ASTRLPBF

The IRFBC30ASTRLPBF is composed of three main components -- a source, a drain and a gate. The source is the device\'s input, the drain is the device\'s output, and the gate is the control element that determines whether or not the device is on or off. The source and the drain are both P-type MOSFETs, while the gate is an N-type MOSFET. This combination helps to minimize power loss and improve the efficiency of the device.

Working Principle of the IRFBC30ASTRLPBF

The working principle of the IRFBC30ASTRLPBF is relatively simple. When the gate of the MOSFET is left floating, the device is in its “off” state. In other words, there is no current flowing between the source and the drain. When an voltage is applied to the gate, the device switches to its “on” state and current flows between the source and the drain. This process is known as “gate turn-on” or “gate switching” and is the basis on which the IRFBC30ASTRLPBF operates.

ApplicationField of the IRFBC30ASTRLPBF

The IRFBC30ASTRLPBF is widely applicable in power switching applications. Its high load current rating and low power consumption make it well-suited for motor control, battery charging, and general electronic switching situations. It is also a good choice for applications where high-speed switching is required, such as power inverters and solar panel controllers.

The IRFBC30ASTRLPBF is also popular for low-side switching applications, which require the device to be connected between the load and ground. This is because the device has an internal capacitance that allows fast switching of the load between high and low states. This makes it an ideal choice for applications that require low-side switching, such as the control of electric fans or air conditioner systems.

Conclusion

The IRFBC30ASTRLPBF is a single N-channel MOSFET that is optimized for power switching applications. It has a load current rating of 30 Amps and a drain-source voltage rating of 100 Volts, making it a popular and versatile choice for DC-driven motor control, battery charging, and general electronic switching. It is also a good choice for low-side switching applications due to its internal capacitance. This article has explained the working principle and application field of the IRFBC30ASTRLPBF.

The specific data is subject to PDF, and the above content is for reference

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