IRFBF20S Allicdata Electronics
Allicdata Part #:

IRFBF20S-ND

Manufacturer Part#:

IRFBF20S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 900V 1.7A D2PAK
More Detail: N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surfa...
DataSheet: IRFBF20S datasheetIRFBF20S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFBF20S is a fully insulated Gate FET that is widely used in a variety of applications. The FET is a type of transistor, or field effect transistor (FET), that operates by allowing a varying electric field to control the operation of the electric current. The FETs have many advantages over other types of transistors, such as the ability to operate at higher frequencies, faster switching times, and the ability to handle more current than other transistor types. The IRFBF20S is an important device for many applications in which high power, speed and accuracy are necessary.

The IRFBF20S is a single transistor of the FET class, which is also known as an insulated gate FET, or IGFET. It consists of a source, a gate and a drain. The source and the drain are connected to external circuits and conductors, while the gate is connected to an independent control circuit. The electric current that passes through the source and the drain is controlled by the electric field created between the gate and the source. The shape of the electric field is determined by the bias voltage that is supplied to the gate. When a positive voltage is applied to the gate, the electric field is pulled towards the gate and a high current will flow from the source to the drain. When a negative voltage is applied to the gate, the electric field is pushed away from the gate and the current will be limited.

The principle of operation behind the IRFBF20S is that it is a form of field effect transistor or FET. This type of transistor works on the concept of electric field control. The electrical current that passes through the source and drain of the transistor is determined by the electric field that is established by the gate bias voltage. The electric field is formed by the gate and the channel between the source and the drain. When a positive voltage is applied to the gate, the electric field is attracted to the gate, allowing a higher current to flow from the source to the drain. A negative voltage at the gate will tend to repel the electric field, reducing the amount of current that is allowed to flow.

The IRFBF20S is suitable for use in a large variety of applications. Examples of common uses include switching circuits, power management, audio circuits, analog-to-digital converters, clock frequency generators, radio transmitters and more. It is able to operate at high speeds and with a large amount of current flow, which makes it ideal for these types of applications. The FET can also be used in conjunction with other FETs, such as the MOSFET, to provide even higher power levels, higher accuracy and more flexibility in design.

The IRFBF20S is a great choice for those looking for a reliable and dependable FET that can handle a variety of applications. It is able to handle a large current flow, operate at high speeds and offer reliable operation. If you are looking for an easy to use, reliable FET with a wide range of applications, then the IRFBF20S is a great choice.

The specific data is subject to PDF, and the above content is for reference

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