IRFB4227PBF Allicdata Electronics
Allicdata Part #:

IRFB4227PBF-ND

Manufacturer Part#:

IRFB4227PBF

Price: $ 2.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 200V 65A TO-220AB
More Detail: N-Channel 200V 65A (Tc) 330W (Tc) Through Hole TO-...
DataSheet: IRFB4227PBF datasheetIRFB4227PBF Datasheet/PDF
Quantity: 1625
1 +: $ 2.22000
10 +: $ 2.15340
100 +: $ 2.10900
1000 +: $ 2.06460
10000 +: $ 1.99800
Stock 1625Can Ship Immediately
$ 2.22
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Power Dissipation (Max): 330W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 24 mOhm @ 46A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFB4227PBF is an extremely useful, three-terminal silicon device which is designed and developed to handle large currents with low Voltage drop and extremely low gate charge. This is a prevalent and widespread field-effect transistor (FET) or commonly known as a MOSFET, which stands for Metal-Oxide Semiconductor Field-Effect Transistors. Majorly, the IRFB4227PBF is utilized as an Inductor-Pack power switch with ultra-low gate charge and low on-resistance for battery and other electronic systems.

The IRFB4227PBF is a single-channel, N-type transistor. This means that the N-type MOSFET has an electronic configuration with seven extra electrons, making them negative. The extra electrons are easily displaced and hence, the device has the ability to transfer large currents from the drain to the source with a low voltage drop. Furthermore, the built-in Schottky Diode between the drain and source terminals act as a protection against inductive kickback, in case of a short circuit occurring. Therefore, it provides high accuracy and consistent performance over a wide range of currents.

The device is designed to handle currents up to 30 Amps with a low voltage drop and low on-resistance. This is achieved by the IRFB4227PBF’s innovative case-to-drain thermally enhanced packaging. It also features an extended guarantee time of up to 2 milliamps-microns. Lastly, it is robust and low power dissipation based along with a compact layout for space-saving designs.

The working principle of the IRFB4227PBF is fairly simple. A current supplied to the gate terminal reasonably changes the resistance from the source to the drain. When the gate is low, the resistance of the IRFB4227PBF is high, blocking the flow of current from the source to the drain. When the gate voltage is increased, it modifies the resistance across the drain and source, allowing for a higher current flow from the drain to the source. This is what happens when the transistor is used for switching operation.

The applications of the IRFB4227PBF are many. It is used in Battery Management Systems (BMS) as an inductor-pack power switch. This gives it an edge on other MOSFETs, which are used because of their low gate charge. Furthermore, they are also used in Motor Drivers and Automotive applications, such as in the circuit that controls the speed of the motor. Similarly, they are utilized in several other power interface systems, DC-DC converters and further, in the communication interface systems.

To conclude, the IRFB4227PBF is an ideal choice for most of today’s Battery Management Systems. Its extremely low gate charge and low voltage drop, along with its robust design, make it the perfect choice for any application. Its ability to handle large currents and versatile use in applications makes it highly convenient for electronic systems, primarily for Battery Management Systems and Motor Drivers.

The specific data is subject to PDF, and the above content is for reference

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