| Allicdata Part #: | IRFB3206PBF-ND |
| Manufacturer Part#: |
IRFB3206PBF |
| Price: | $ 1.70 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 120A TO-220AB |
| More Detail: | N-Channel 60V 120A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: | IRFB3206PBF Datasheet/PDF |
| Quantity: | 28000 |
| 1 +: | $ 1.70000 |
| 10 +: | $ 1.64900 |
| 100 +: | $ 1.61500 |
| 1000 +: | $ 1.58100 |
| 10000 +: | $ 1.53000 |
| Vgs(th) (Max) @ Id: | 4V @ 150µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6540pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 3 mOhm @ 75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IRFB3206PBF is a N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by international rectifier. MOSFETs are semiconductor devices used to control and switch electronic signals and power. They are used in a wide range of electronic applications including switching and amplifying circuits.
The IRFB3206PBF is a 60V single N-Channel MOSFET in a 4-pin plastic To-220 through-hole package. The device is a popular choice due to its low resistance, low on-state gate-source voltage and low gate charge. The MOSFET’s maximum drain current is 11A and its maximum drain-source voltage (Vds) is 60V. The MOSFET also has an on-state resistance RDS(on) of 0.042 ohms and a gate threshold voltage of 3.2V. The device is rated for a maximum operating temperature of 175°C.
MOSFETs are commonly used in circuits that require a low resistance to control and switch large amounts of voltage and current. The IRFB3206PBF is commonly used in DC-DC converters, switch-mode power supplies, battery charging systems, drivers for DC motors, audio amplifiers and audio power amplifiers. The IRFB3206PBF is also often used in robotics as it can efficiently control the motion of small and large electric motors with a low on-resistance.
The working principle of a MOSFET is relatively simple. The voltage applied to the gate terminal creates an electric field across the MOSFET. This electric field combines with the majority carriers in the channel region to create a current which causes the MOSFET to conduct. This current is known as the drain current and is controlled by the gate voltage. This allows the MOSFET to be used as a switch; when the gate voltage is increased, the drain current increases and a conducting channel is created between the drain and the source. When the gate voltage is decreased, the drain current decreases and the channel is shut off, cutting off the current flow.
The IRFB3206PBF is a high-performance, low on-resistance MOSFET suitable for a wide range of applications. Its relatively low on-resistance and low gate-source voltage make it an ideal choice for controlling and switching large amounts of voltage and current. This makes it perfect for applications such as DC-DC converters, audio amplifiers, switching power supplies and battery charging systems. The IRFB3206PBF’s high maximum drain-source voltage and operating temperature rating further make it an ideal choice for controlling and switching high temperatures, large currents and wide voltage ranges.
The specific data is subject to PDF, and the above content is for reference
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IRFB3206PBF Datasheet/PDF