| Allicdata Part #: | IRFB4321GPBF-ND |
| Manufacturer Part#: |
IRFB4321GPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 150V 83A TO-220AB |
| More Detail: | N-Channel 150V 83A (Tc) 330W (Tc) Through Hole TO-... |
| DataSheet: |  IRFB4321GPBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 330W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4460pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 15 mOhm @ 33A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 83A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRFB4321GPBF is a single N-channel enhancement mode Mosfet designed and manufactured by International Rectifier. Its special characteristics make it suitable for both consumer and industrial applications. In this article, the application field and working principle of the IRFB4321GPBF will be discussed.
Application Field: The IRFB4321GPBF is a versatile component, suitable for consumer and industrial applications. In consumer applications, it can be used for electronic dimmers, LED lighting, DC-DC converters, low-noise power switching and low power audio circuits. In industrial applications, it can be used for high-voltage, high-power switching, inverters and motor control circuits. It is also suitable for power supply design applications.
Working Principle: The IRFB4321GPBF is an N-channel Mosfet, meaning that it contains a depletion layer of negatively-charged electrons that are held in place by a strong electric field. The depletion layer prevents current from passing between the drain and the source. When a positive voltage is applied to the gate, the electric field is weakened and electrons can move freely between the source and drain, allowing current to pass. This is the basic principle of how an N-channel Mosfet works.
The IRFB4321GPBF is well suited for applications that require fast switching times and low on-resistance. It has a maximum drain-source voltage of 20 V and a maximum drain current of 3 A. The maximum on-resistance is 5 mΩ and the maximum gate-source voltage is +- 20 V. The power dissipation is 200 W and the switching time is 100 ns.
In conclusion, the IRFB4321GPBF is a versatile single N-channel Mosfet designed for a wide range of consumer and industrial applications. Its special characteristics make it suitable for power switching, inverters, motor control, and low-noise audio circuits. It has a maximum drain-source voltage of 20 V and a maximum drain current of 3 A. The on-resistance is 5 mΩ and the gate-source voltage is +- 20 V. The power dissipation and switching time are 200 W and 100 ns, respectively.
The specific data is subject to PDF, and the above content is for reference
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