IRFB3306PBF

Vgs(th) (Max) @ Id:	4V @ 150µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	230W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4520pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	120nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	4.2 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IRFB3306PBF is a depletion-mode enhancement field-effect transistor (FET). It is a three-terminal device composed of an active semiconductor region, a source, and a drain. The device offers a high input impedance and low output impedance, as well as a wide range of operation speeds and switching characteristics. As with all FETs, the IRFB3306PBF is used to amplify, switch, and regulate electrical signals. The IRFB3306PBF is a semiconductor device based on the principles of field-effect electronics. When a voltage difference is applied to the gate of the transistor, electrons are attracted towards it, creating an electric field in the channel between the source and the drain. This electric field modulates the conductivity of the channel; when the channel is turned "on," current flows from the source to the drain. By controlling the voltage applied to the gate, the current across the channel can be switched "on" and "off," or regulated as desired.The IRFB3306PBF is a depletion-mode device, which means that the current between the source and the drain is already on when the voltage applied to the gate is 0 volts; to shut off the current, the voltage on the gate must be negative. To turn the current "on," the voltage applied to the gate must be positive. The device has a maximum gate-source voltage (VGS) of 60V to achieve the optimum switching and cutoff characteristics. The IRFB3306PBF offers a wide range of applications due to its high input impedance, low output impedance, and high switching speed. It is used in a variety of motor control, amplifier, and power supply circuits, as well as in light dimmer and fan speed controllers, power distribution circuits, and motor control systems. It can also be used in pulse-width modulated (PWM) control circuits, where the speed and intensity of DC motors can be adjusted with accurate control of variable voltage and current. This makes the device particularly suitable for applications such as HVAC control and servo drive systems.The IRFB3306PBF is a high power, low cost, and high efficiency MOSFET. Its small size and high current density allow it to be used in space-constrained systems where power dissipation is an issue. It has been designed to offer superior performance in power circuits and high stability under adverse conditions. Its low gate charge, low on-resistance, and low gate-source voltage requirements make it an ideal choice for power conversion and amplifier circuits.In summary, the IRFB3306PBF is a depletion-mode, enhancement field-effect transistor designed to amplify, switch, and regulate electrical signals. Its high input impedance, low output impedance, and high switching speed make it suitable for a wide range of applications. It is an excellent choice for motor control, amplifier, and power supply circuits, as well as in light dimmer and fan speed controllers, power distribution circuits, and motor control systems, due to its superior performance, low cost, and high efficiency.

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