IRFBC40L Allicdata Electronics
Allicdata Part #:

IRFBC40L-ND

Manufacturer Part#:

IRFBC40L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 6.2A TO-262
More Detail: N-Channel 600V 6.2A (Tc) 3.1W (Ta), 130W (Tc) Thro...
DataSheet: IRFBC40L datasheetIRFBC40L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFBC40L is an N-Channel MOSFET with a maximum drain current of 32.7A and a drain-source voltage of about 300V. This MOSFET is often used in medium and high-power applications since it offers good performance at moderate voltages. With a low on-resistance of 0.039Ohm and an input capacitance of 302pF, it is ideal for applications such as AC-DC and DC-DC converters, motor controllers and low-voltage line drivers.

The IRFBC40L is a commonly used MOSFET for medium and high power applications due to its ability to operate at moderate voltage levels, low on-resistance, and minimal capacitance. The MOSFET adopts the latest MOSFET technology and has a low on-resistance, which helps it handle higher current levels without suffering from thermal issues. This means it is suitable for a wide range of applications where high load currents are present, such as in AC-DC converters, DC-DC converters, motor controllers, and low voltage line drivers. Additionally, given its low input capacitance, the transistor is well-suited for use in switching applications.

The working principle of the IRFBC40L MOSFET is that it is an N-channel device that is triggered by the application of a positive voltage to the gate. When a positive voltage is applied to the gate, an inversion layer is formed at the p-n junction and this enables electrons to flow through the channel. This is referred to as the “transconductance” which is a measure of the device’s ability to conduct current.

The transconductance of a MOSFET is dependent on the width of the channel, which is in turn determined by the voltage applied to the gate. If the voltage applied is greater than the threshold voltage of the device, the channel will open and electrons will be able to flow through it. The resistance of the channel is also determined by the voltage applied to the gate, with higher voltages yielding lower resistance. This makes it possible for the device to be used in a wide variety of applications that require different conduction levels and different impedance levels.

The IRFBC40L is a versatile MOSFET that has a variety of uses in different industries. Due to its low input capacitance, it can be used to power a variety of circuits, such as motor drivers and AC-DC converters. Additionally, it can also be used in low voltage line drivers and switching applications thanks to its low on-resistance and high transconductance values. As such, it is a great choice for applications that require high current levels and moderate voltage levels.

The specific data is subject to PDF, and the above content is for reference

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