IRFBE20STRL

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	530pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	38nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	6.5 Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	1.8A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IRFBE20STRL Application Field and Working Principle

The IRFBE20STRL is a fast-switching silicon-controlled Field Effect Transistor (FET) designed for high-frequency power switching applications. This product is intended for use in medium to high current and high frequency circuits such as power conversion, solid-state relays and switching power supplies. It is available in a lead free package and has a RoHS compliance rating of 6.

Product Overview

The IRFBE20STRL is designed specifically to provide fast switching performance, enabling high-speed operation in battery operated devices, such as mobile phones and portable game consoles. It has a maximum voltage of 100V, a maximum drain source voltage (VDS) of 100V and a maximum drain current of 20A. The on-state resistance (RDS(on)) is also relatively low at just 21 mΩ. The IRFBE20STRL is manufactured using advanced trench MOSFET technology and is fully compatible with Pb-free solders, allowing for increased production efficiency. It also has an enhanced electrostatic protection design for improved system reliability.

Product Functions

The IRFBE20STRL can be used as a switch to control the current, voltage and power in an application, where it is capable of high-speed operations up to 5.5 MHz. It is also designed to prevent any transient voltage spikes which can be caused by high input and output currents which could damage the device. This makes it take better advantage of high power switching technologies and reduce power losses. It is also capable of low gate drive requirements, which makes it suitable for decreasing the size and cost of control circuits, as well as achieving lower power consumption while still maintaining high-speed operation. Finally, the product also features a low stand-by current, which makes it ideal for increasing the efficiency of portable and mobile devices which are used for long periods of time.

Product Advantages

The main advantages of the IRFBE20STRL include increased speed, which makes it well suited for high frequency circuits and for use in medium to high current applications. As previously mentioned, it has a low on-state resistance (RDS(on)) which helps reduce power and heat dissipation. The low gate drive requirement also means that the size and cost of control circuits can be reduced. Furthermore, its electrostatic protection helps ensure system reliability and the low stand-by current means it is energy efficient.

Applications

The IRFBE20STRL is suitable for use in a range of applications, such as power conversion, switching power supplies and solid-state relays. It can be used for replacing automotive relays, audio amplifiers, motor drives, computers and USB power supplies.

Conclusion

The IRFBE20STRL is a relatively fast-switching Field Effect Transistor that is well-suited for high frequency and medium to high current applications. It is designed with a low RDS(on), low gate drive requirement and enhanced electrostatic protection to ensure reliability and improved performance. It also has a low stand-by current to reduce power consumption and is suitable for replacing relays and circuits in portable and mobile devices.

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