IRFZ34PBF Allicdata Electronics
Allicdata Part #:

IRFZ34PBF-ND

Manufacturer Part#:

IRFZ34PBF

Price: $ 1.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 30A TO-220AB
More Detail: N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-22...
DataSheet: IRFZ34PBF datasheetIRFZ34PBF Datasheet/PDF
Quantity: 4244
1 +: $ 1.34000
10 +: $ 1.29980
100 +: $ 1.27300
1000 +: $ 1.24620
10000 +: $ 1.20600
Stock 4244Can Ship Immediately
$ 1.34
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFZ34PBF is a fast-acting power MOSFET, a three-terminal devices used in a variety of electronic operations. It is constructed from an insulation-gate field-effect transistor (IGFET) or metal-oxide-semiconductor field-effect transistor (MOSFET), and is designed to be used in a variety of applications such as switching loads, providing voltage gain, and protecting sensitive circuits. While the IRFZ34PBF can be used in many electronic applications, its primary purpose is to replace the commonly used relay, providing faster speeds and greater reliability without the complexity of a relay.The IRFZ34PBF is a depletion-mode MOSFET, the second most common type of transistor after the enhancement-mode MOSFET. Like all depletion-mode MOSFETs, the IRFZ34PBF transistors lack an internal gate-to-source voltage, meaning that the transistor is always on and no additional voltage is required to actuate it. As a result, depletion-mode MOSFETs are often used as logic level shift devices or to provide adjustable currents across a wide range of loads.

The IRFZ34PBF is a P-channel power MOSFET, meaning that the channel width between the drain and the source is governed by the flow of holes (positive charges), rather than electrons (negative charges). This arrangement provides a higher level of control than is possible with N-channel devices, since only the voltage applied to the gate needs to be adjusted to control the flow of current. This makes the IRFZ34PBF ideal for applications where a high current without significant electro-mechanical movement is desired.

The IRFZ34PBF is designed to provide speedy switching speeds, allowing it to actuate a variety of loads rapidly. With a maximum on-state resistance of 0.023 ohms, the IRFZ34PBF is capable of providing a maximum of 47 amps at 4.5 volts. Furthermore, the IRFZ34PBF has a high tolerance for off-state leakage currents, allowing it to be safely used in a variety of configurations. Closely related to the IRFZ34PBF is the IRFR24055, a similar device with slightly lower switching speeds and a higher resistance.

The IRFZ34PBF is an invaluable device for a variety of purposes, from simple switching to voltage gain to protecting delicate circuits. As its increased efficiency, speed, and reliability make it a powerful and versatile device, it is an invaluable tool for the modern designer. From general-purpose logic components, to pulse generators, to signal conditioners, the IRFZ34PBF can provide a reliable and cost-effective solution for a wide variety of projects.

The specific data is subject to PDF, and the above content is for reference

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