IRFZ24S Allicdata Electronics
Allicdata Part #:

IRFZ24S-ND

Manufacturer Part#:

IRFZ24S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 17A D2PAK
More Detail: N-Channel 60V 17A (Tc) 3.7W (Ta), 60W (Tc) Surface...
DataSheet: IRFZ24S datasheetIRFZ24S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFZ24S is a general-purpose N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) designed and manufactured by International Rectifier (IR). It’s a single-mode transistor that can be used to control the current of a wide variety of applications, many of which require swift, efficient, and reliable current control. 

A metal-oxide-semiconductor field-effect transistor (MOSFET) is an electronic device that can be used to control the flow of current through a circuit. It is a three-terminal voltage-controlled device made up of one or more metal oxide layers surrounded by a semiconductor material. A MOSFET is commonly used as a switch to control the circuit’s current in applications such as amplifiers, voltage regulators, motor controllers, and other electronic circuits. 

The IRFZ24S is a single-mode MOSFET designed for use in many types of applications, such as switching and power amplification. It is designed to be compatible with many types of systems, from low-voltage, high-current control to high-voltage, low-current control. Its drain-source breakdown voltage is rated as 85 Volts, and its maximum drain current is rated as 10 Amps. It also has an on-resistance of about 7 Ohms. 

The IRFZ24S works by controlling the flow of current through the circuit. It does this by using the flow of electrons between two terminals, the gate terminal and the source terminal, in a process known as channel modulation. The gate terminal is connected to the circuit’s voltage source, while the source terminal is connected to the circuit’s power source. The voltage placed on the gate terminal causes a channel to form between the source terminal and the drain terminal, allowing current to flow between them. The current can be controlled by changing the gate voltage, which causes the channel to become wider or narrower, allowing more or less current to flow, respectively. 

The IRFZ24S is a versatile MOSFET that can be used in a variety of applications. For example, it can be used to control the current flow of motor controllers, amplifiers, and other electronic circuits that require precise control of current flow. It can also be used to regulate the power outputs of supplies in battery management systems, allowing them to supply steady current that is necessary for the circuit’s operation. In addition, it can be used to amplify signals in electronic circuits, providing higher signal levels and greater accuracy. 

Overall, the IRFZ24S is a great MOSFET for applications that require precise control of current flow and power outputs. Its versatility and reliability make it an ideal choice for many types of circuits and applications.

The specific data is subject to PDF, and the above content is for reference

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