IRFZ10PBF Allicdata Electronics
Allicdata Part #:

IRFZ10PBF-ND

Manufacturer Part#:

IRFZ10PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 10A TO-220AB
More Detail: N-Channel 60V 10A (Tc) 43W (Tc) Through Hole TO-22...
DataSheet: IRFZ10PBF datasheetIRFZ10PBF Datasheet/PDF
Quantity: 19
Stock 19Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 43W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFZ10PBF is a type of n-channel power Field-Effect Transistor (FET). It is designed for use in applications where amplification and switching is required, such as motor control and power switching. The FET is a type of transistor that uses voltage to control current flow. It is an efficient method of controlling high current loads and has a low power dissipation requirement. The IRFZ10PBF is an ideal choice for a range of applications, from consumer electronics to industrial control.

The IRFZ10PBF is a metal oxide semiconductor FET (MOSFET). This type of transistor utilizes an insulated gate to control current flow by varying voltage on the gate. The result is very low power consumption, as the gate requires very little current to control a large load. The insulated gate also helps to ensure high switching speed and minimal switching losses.

Thus, the IRFZ10PBF is a n-channel, insulated-gate, metal-oxide semiconductor field-effect transistor (MOSFET). It has many advantages, including a very small surface area, low power consumption and a high switching speed. It is used in applications such as power switching, motor control and audio switching.

The operation of the IRFZ10PBF is relatively straightforward. It is an n-channel device, meaning that it requires a positive voltage to turn on and a negative voltage to turn off. When a positive voltage is applied to the gate of the transistor, the current in the channel increases. Conversely, when a negative voltage is applied to the gate of the transistor, the current in the channel decreases.

The current in the channel is directly controlled by the voltage on the gate and the resulting current can be used to switch loads or control devices. In addition, the the IRFZ10PBF features a high input impedance and low output impedance, allowing it to function as a voltage regulator.

The IRFZ10PBF is an ideal choice for applications that require a low power, efficient means of controlling current flow. It can be used in a variety of applications and is capable of handling high currents, as well as providing precise control. The IRFZ10PBF is a highly reliable, versatile device that is suitable for a range of applications.

The specific data is subject to PDF, and the above content is for reference

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