IRFZ34EPBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	68W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	680pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	42 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	28A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IRFZ34EPBF Application Field and Working Principle

The IRFZ34EPBF is an advanced N-Channel MOSFET that has been designed to offer both high speed and low on-resistance. This power MOSFET is used primarily in the design of power management and energy control systems, consumer electronics, and automotive electronics. It is available in either standard through-hole (TO-220) or surface mount (SMD-48) packages, offering a wide range of applications.The IRFZ34EPBF is an N-channel depletion mode MOSFET, or “normally off” MOSFET. It features a drain-source breakdown voltage (dV/dT) of -30 V and an On-resistance of 0.85 Ohms. As with any MOSFET, it is driven by a gate charge that must be supplied externally, usually (but not always) in the form of a voltage. When a sufficiently large voltage is applied to the gate, the MOSFET channels current from the source to the drain and into the load. As the load is connected in parallel with the gate, the current flows through the MOSFET and into the load.Due to the IRFZ34EPBF\'s low on-resistance, it can be used for a variety of purposes, such as providing a DC/DC converter, controlling a DC motor, or driving power LEDs in high-power lighting applications. The IRFZ34EPBF is also well suited for applications that require high speed switching. It is fast enough to drive most logic circuits. Additionally, the MOSFET can control high-powered appliances, such as water pumps or air conditioners.The IRFZ34EPBF is available in both through-hole and surface-mount packages. The through-hole version can be used with standard connections, such as pins, and is usually more suitable for prototyping purposes. The surface-mount version has a flat rectangular print pattern which makes it suitable for automated SMD production lines. The surface-mount version features a drain source voltage of -30 V, an on-resistance of 0.85 Ω, a thermal resistance of 6°C/W, and an entry price of approximately US $1.5.The IRFZ34EPBF is an excellent MOSFET to use in designs that require high-speed and low on-resistance. Its low on-resistance and wide voltage range make it a versatile choice for many power management and energy control applications. Its availability in both through-hole and surface mount packages, as well as its moderate entry price, make it an ideal choice for a wide range of applications.

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