IRFZ46NSPBF Allicdata Electronics
Allicdata Part #:

IRFZ46NSPBF-ND

Manufacturer Part#:

IRFZ46NSPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 53A D2PAK
More Detail: N-Channel 55V 53A (Tc) 3.8W (Ta), 107W (Tc) Surfac...
DataSheet: IRFZ46NSPBF datasheetIRFZ46NSPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1696pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IRFZ46NSPBF is a N-channel Power MOSFET developed by Infineon Technologies, featuring high voltage and current ratings. This MOSFET is suitable for various switching and amplification applications. Its advanced design and process technology make it ideal for long-term reliability.

Application Field of IRFZ46NSPBF

The IRFZ46NSPBF is suitable for applications such as high voltage loads and general purpose switching including switching high power loads, heater control, and DC/DC Converter. It is also suitable for any automotive application where a higher current throughput is required. This device also provides a low on-state resistance, enhancing power efficiency and performance. Other areas where it can be used include audio amping, robotics, laser systems and portable device applications.

Working Principle of IRFZ46NSPBF

At the heart of IRFZ46NSPBF lies a N-channel MOSFET. The Gate of the device is the voltage input signal which controls current flow through the MOSFET. When the voltage input signal reaches a certain threshold level, the MOSFET switches on and starts to conduct current. This mechanism of current control is what enables the MOSFET to be used as a switch and is also the main element of its working principle.

The N-channel MOSFET also known as a "Depletion Mode" MOSFET because when biased in the reverse direction (i.e., VGS < 0) it acts as a normally-on device. This is the state in which the MOSFET is in when not being used in the circuit and is a key part of its operating mechanism. As such, when voltage is applied at the gate, the number of electrons that are available to flow through the MOSFET increases and the current starts to flow. The current flow can be controlled by adjusting the bias voltage level at the gate.

In addition to its switching capabilities, the MOSFET also offers an enhanced high frequency performance. This is largely due to its low gate capacitance, which allows it to easily switch on and off without dissipating excessive amounts of power. This enhances the power handling capabilities of the MOSFET, making it particularly well-suited for high frequency applications.

The IRFZ46NSPBF is also well-suited for use in a variety of power conversion applications. Due to its high voltage and current ratings, it is one of the preferred components for power converters. These converters are used to convert one form of energy to another, such as DC-to-AC power conversion. The MOSFET also offers a low thermal resistance, allowing it to handle higher power levels without exceeding its specified temperature ratings.

The IRFZ46NSPBF is an excellent choice for high voltage, low current and high frequency applications. Its advanced design and process technology make it ideal for long-term reliability and power conversion applications in a wide range of automotive, commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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