IRFZ24NL Allicdata Electronics
Allicdata Part #:

IRFZ24NL-ND

Manufacturer Part#:

IRFZ24NL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 17A TO-262
More Detail: N-Channel 55V 17A (Tc) 3.8W (Ta), 45W (Tc) Through...
DataSheet: IRFZ24NL datasheetIRFZ24NL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFZ24NL is a high-power metal-oxide-semiconductor field-effect transistor (MOSFET) designed to efficiently control the switching of motor loads, resistive heating elements, and other high power applications. The IRFZ24NL is a single N-type enhancement-mode MOSFET designed for high current load switches. The device is offered in three different voltages and offers a wide range of performance parameters.

The IRFZ24NL utilizes an N-type MOSFET architecture and is designed for bidirectional current flow. The MOSFET provides high input impedance and low on-state resistance. The IRFZ24NL is typically used as a high-power switch or a load controller in motor control and power switching applications. When the gate of the device is driven high, the source and drain terminals will be connected, allowing current to flow through the device. When the gate voltage is driven low, the source and drain terminals will be disconnected, preventing current flow.

The IRFZ24NL is specified to operate with input voltages ranging from 4 V to 12 V and offers a maximum drain current ratings of 7 A. The device features an on-resistance of 2.8 ohms and a maximum Rds(on) of 3.2 ohms. The on-state drain-source voltage for the device is 75 mV (typical) at 4 V and increases to 400 mV (typical) at 12 V. The device also features an output capacitance of 45 pF and a maximum gate charge of 40 nC.

The IRFZ24NL is capable of driving inductive load, resistive load and 3-phase brushless motors. The device is ideal for automotive applications and other space-constrained applications due to its small package size. The device is offered in several different packages, including the popular SOIC-8, TO-220, and TO-263 packages.

The IRFZ24NL features a temperature range of –55°C to 150°C and is capable of operating in applications with a maximum power dissipation of 7 W. The device has a low gate threshold voltage of 2 V and is capable of switching at high frequencies. The device is rated for avalanche energy of 9.9 mJ and is designed for high-temperature operation.

In summary, the IRFZ24NL is a single N-type enhancement-mode MOSFET with a high input impedance and low on-state resistance, capable of driving inductive loads, resistive loads, and 3-phase brushless motors. The device is offered in several packages, can handle a maximum power dissipation of 7 W, and operates in a temperature range of –55°C to 150°C.

The specific data is subject to PDF, and the above content is for reference

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