IRFZ48ZL

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The IRFZ44ZL is a N-Channel MOSFET that has been designed and manufactured by International Rectifier. As its name implies, it is part of the 47ZL series, with a maximum drain-source voltage of 100V and maximum drain current of 75A. This model is primarily used as a switch in high power applications.

MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) are voltage controlled devices commonly used in power electronics, where they can act as current switches with very low loss in off-state. The IRFZ44ZL is a P-channel device, meaning that when its gate voltage is positive compared to its source voltage it is "on", conducting current from source to drain. In other words, when the gate voltage is below the source voltage, the FET is "off", not conducting current and with very low loss.

This device features low gate charge and low on-resistance. It has low input capacitance which allows it to switch at higher frequencies, allowing it to be used in high power applications. It also has a very fast reverse recovery time, allowing it to switch off quickly when needed. This makes it ideal for use in high-performance switching applications such as motor control, power conversion and switching power supplies.

The IRFZ44ZL also has some additional features that make it a great choice for many applications. It has an extremely low reverse transfer capacitance, meaning it can switch at very high frequencies without significant losses. It also has low threshold voltage, meaning it can be switched quickly and accurately regardless of load. Lastly, it has temperature independent gate threshold characteristics, meaning it can be used in a wide range of temperatures without significant losses.

The IRFZ44ZL can be used in a variety of applications, from motor control and switching power supplies to power conversion. It has excellent performance characteristics, low gate charge and low on-resistance, and features temperature independent gate threshold characteristics. This makes it perfect for applications that require fast switching, high gains and low losses. This MOSFET also has a very fast reverse recovery time, making it ideal for fast switching applications.

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