IRFZ44STRR Allicdata Electronics
Allicdata Part #:

IRFZ44STRR-ND

Manufacturer Part#:

IRFZ44STRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 50A D2PAK
More Detail: N-Channel 60V 50A (Tc) 3.7W (Ta), 150W (Tc) Surfac...
DataSheet: IRFZ44STRR datasheetIRFZ44STRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRFZ44STRR is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that has very low on-resistance. This type of transistor has a drain-source on resistance of 47 milliohm and is rated at 60 volts. This makes the IRFZ44STRR ideal for applications where high power efficiency and low voltage drop are required.

The IRFZ44STRR is a single n-channel enhancement mode MOSFET. It has an essentially vertical enhancement type of transfer characteristics with a gate-source threshold voltage of about 4V typically. This MOSFET is operated by applying a positive voltage on the gate of the MOSFET and inducing a metal oxide semiconductor (MOS) capacitance from the gate to the source. This establishes a channel through which current will flow.

For this MOSFET to turn ON, the voltage that is applied to the gate has to be greater than the threshold voltage. This can be done by applying a voltage greater than the threshold voltage from the gate to the source. The voltage on the gate is referred to as the gate-source voltage. When this voltage is higher than the threshold voltage, the channel is established and current will flow through it. The channel width is determined by the gate-source voltage.

The current through the MOSFET is a function of the drain-source voltage. The drain-source voltage is a DC voltage applied between the drain and the source of the MOSFET. The current flow through the MOSFET is the product of the drain-source voltage and the channel on-resistance.

The IRFZ44STRR can be used in a number of applications such as motor control applications, switching power supplies, switching regulators, logic level interfacing and as a power switch for DC to DC converters. It also has some other applications in power amplifiers, switching actuators, light dimmers and low-side switches.

The IRFZ44STRR is a useful device in many applications because of its low on-resistance and low voltage rating. This makes it an ideal choice for applications where high power efficiency and low voltage drops are desired. It is especially useful in motor control applications because of its ability to switch at high speed.

In summary, the IRFZ44STRR is a type of single n-channel enhancement mode MOSFET. It has a low on-resistance and is rated at 60 volts. It can be used in a variety of applications where high power efficiency and low voltage drops are desired such as motor control applications, switching power supplies, switching regulators, logic level interfacing and power switching for DC to DC converters.

The specific data is subject to PDF, and the above content is for reference

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