IRFZ34S Allicdata Electronics
Allicdata Part #:

IRFZ34S-ND

Manufacturer Part#:

IRFZ34S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 30A D2PAK
More Detail: N-Channel 60V 30A (Tc) 3.7W (Ta), 88W (Tc) Surface...
DataSheet: IRFZ34S datasheetIRFZ34S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFZ34S is a type of transistor that belongs to FETs (Field effect transistors) family, specifically to single MOSFETs. It is a high-voltage and fast-switching device and it is widely used in power electronic applications. This type of transistor operates as a voltage-controlled switch, allowing varying amounts of current to pass through its terminals depending on the voltage that is applied to its gate.

The IRFZ34S is capable of handling drain currents of up to 20 amperes and drain-source voltages of up to 28 volts. This makes the transistor useful for a wide variety of applications, including switch-mode power supplies, DC-DC converters, DC motor speed controllers, light dimmers, and many other applications. It is also frequently used in audio amplifiers and signal processing circuits, including audio preamplifiers, active filters, mixers, and frequency converters.

The principle of operation of the IRFZ34S is based on the principle of Field Effect. It consists of three terminals –Gate, Drain and Source. When a voltage signal is applied to the Gate terminal, it creates an electric field that attracts charge carriers and conducts current from the drain to the source. The magnitude of the current is determined by the magnitude of the voltage signal which could be either an AC or DC signal.

The IRFZ34S is highly capable of switching currents quickly because of a low “on-state” resistance. This allows the device to operate efficiently in power electronic applications such as switching power supplies and switching regulators. The low “on-state” resistance is achieved by using a high doping concentration in the drain-source channel of the device, which minimizes the resistance. The gate-to-source resistance of the device is also relatively low allowing for fast switching times.

The IRFZ34S has the ability to withstand large electrostatic discharges (ESD) which makes it advantageous for use in consumer electronics. This ability makes it suitable for use in places where electrostatic discharge protection is vital, such as in medical devices. The datasheet of the device characterizes the human-body model ESD of up to 2000 volts and machine-model ESD of up to 400 volts, making them ideal for applications where proper protection from ESD is essential.

The IRFZ34S is a popular device for power electronic and consumer electronic applications due to its high-voltage and fast-switching capabilities. It is also economical due to the fact that it can withstand large electrostatic discharges, making it an attractive choice for many applications. Its market availability and low cost make it a viable alternative to other types of transistors available.

The specific data is subject to PDF, and the above content is for reference

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