IRFZ48R Allicdata Electronics
Allicdata Part #:

IRFZ48R-ND

Manufacturer Part#:

IRFZ48R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 50A TO-220AB
More Detail: N-Channel 60V 50A (Tc) 190W (Tc) Through Hole TO-2...
DataSheet: IRFZ48R datasheetIRFZ48R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 18 mOhm @ 43A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFZ48R is a surface mount N-Channel enhancement mode MOSFET, which can be used for a variety of applications. The device has a maximum drain source voltage(VDD) of 60V and maximum drain current of 48A, making it ideal for applications such as switch mode power supplies, DC/DC converters, motor drives and other general purpose power MOSFET applications.

The IRFZ48R is constructed using the vertical DMOS process with silicon substrate, making it easier to use in applications with tight packing requirements and in higher voltage power supplies. It also has a low on-resistance to facilitate high current applications and low power dissipation. This makes it ideal for use in high power, high voltage applications where efficient operation and low power dissipation are critical.

The IRFZ48R is also able to operate at high switching frequencies which makes it ideal for high speed applications such as motor drivers, lighting applications and pulse width modulated (PWM) devices. The device is provided in the standard surface mount TO-220 package, making it suitable for soldering onto PCBs and connecting to peripheral components.

The working principle of the IRFZ48R begins when an electric voltage is applied between the gate and source of the FET. This induces a controlled electric field into the semiconductor material of the device, creating an inversion layer of charge carriers which causes the FET to become conducting. As this inversion layer increases, the drain source voltage drops and as it decreases, the device will become non-conducting. This process is referred to as \'enhancement mode\' and is key to the operation of all MOSFETs.

The IRFZ48R is protected against over-temperature, over-voltage and over-current events due to an integrated circuit protection mechanism. This increases the reliability and long-term operation of the device and makes it more suitable for use in high power applications. If the device should become overloaded, the protection mechanism will shut the device down, preventing it from suffering any permanent damage.

In summary, the IRFZ48R is a versatile MOSFET device that can be used in a wide range of applications. It has a low on-resistance which makes it ideal for high current applications and it also has temperature, voltage and current protection mechanisms which make it suitable for use in high power applications. The device is also provided in the standard surface mount TO-220 package, making it convenient to use in soldering applications.

The specific data is subject to PDF, and the above content is for reference

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