IRFZ44NLPBF Allicdata Electronics
Allicdata Part #:

IRFZ44NLPBF-ND

Manufacturer Part#:

IRFZ44NLPBF

Price: $ 1.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 49A TO-262
More Detail: N-Channel 55V 49A (Tc) 3.8W (Ta), 94W (Tc) Through...
DataSheet: IRFZ44NLPBF datasheetIRFZ44NLPBF Datasheet/PDF
Quantity: 3897
1 +: $ 1.10250
10 +: $ 0.97398
100 +: $ 0.76999
500 +: $ 0.59715
1000 +: $ 0.47144
Stock 3897Can Ship Immediately
$ 1.22
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRFZ44NLPBF is a common source element of the MOSFET family, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor. It belongs to the class of single N-channel MOSFETs and is used for a number of applications in a variety of industries. The IRFZ44NLPBF is actually a power MOSFET, and is ideal for switching applications due to its very low on-resistance.

The IRFZ44NLPBF is manufactured by International Rectifier and is a 35V pulsed drain current MOSFET with low gate charge. It is offered in a standard TO-220 package, which makes it suitable for a variety of applications in both high and low voltage environments.

The IRFZ44NLPBF is primarily used for audio amplifier, DC-to-DC converters, switching regulators, low side switch, power converters, power management, and battery protection applications. It is capable of switching up to 20A, which makes it a suitable choice for many different applications.

The working principle behind the IRFZ44NLPBF is based on the metal-oxide-semiconductor structure, which has two terminal gates for controlling the flow of electrons. It has four main elements, the source, gate, drain, and substrate. The gate is the element responsible for controlling the operation of the transistor.Unlike bipolar junction transistors, MOSFETs are majority carriers, which means they can be controlled by applying an electric charge to their gate terminal. The voltage on the gate terminal determines the drain current, and the amount of drain current is directly proportional to the amount of gate voltage.

When the gate is not exposed to any voltage, it will be in a “floating” state. However, when a voltage source is connected to the gate, the MOSFET can be thought of as a resistor with a variable resistance. The more the voltage on the gate, the more the resistance of the MOSFET. This is how the IRFZ44NLPBF works.

The IRFZ44NLPBF is a very versatile device and can be used in several applications. It can be used in DC-to-DC converters for providing a high speed switching operation, in audio amplifiers for building high power audio amplification, and in switching regulators for efficient power conversion. In addition, the low gate charge of the device makes it suitable for low side switch applications, as well as battery protection circuits.

Overall, the IRFZ44NLPBF is a versatile device that is suitable for a variety of applications. Its low on-resistance and low gate charge make it the perfect choice for many applications requiring fast switching and high power conversion. It is also a good fit for DC-to-DC converters, audio amplifiers, switching regulators, low side switches, and battery protection circuits.

The specific data is subject to PDF, and the above content is for reference

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