IRFZ24SPBF Allicdata Electronics
Allicdata Part #:

IRFZ24SPBF-ND

Manufacturer Part#:

IRFZ24SPBF

Price: $ 1.98
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 17A D2PAK
More Detail: N-Channel 60V 17A (Tc) 3.7W (Ta), 60W (Tc) Surface...
DataSheet: IRFZ24SPBF datasheetIRFZ24SPBF Datasheet/PDF
Quantity: 1000
1 +: $ 1.98000
10 +: $ 1.92060
100 +: $ 1.88100
1000 +: $ 1.84140
10000 +: $ 1.78200
Stock 1000Can Ship Immediately
$ 1.98
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRFZ24SPBF is a Power MOSFET, made from silicon-based material. It has an insulated gate with a gate dielectric and a channel between the drain and source. The channel is highly doped with n-type and p-type materials, giving it a high transconductance. Its body structure is symmetric, making it easy to use and versatile in applications.

The IRFZ24SPBF has extremely high voltage and current ratings, making it suitable for power management applications. It is capable of both P and S channel configurations, which allows it to be used in a variety of different circuits.

The working principle of the IRFZ24SPBF is based on the principle of metal-oxide-semiconductor (MOS). This principle involves the placing of metal-oxide layers between the source and drain of the device. The gate terminal provides an insulated barrier which allows the MOSFET to either conduct or block current flow, depending on the applied gate voltage.

The IRFZ24SPBF has a drain-source breakdown voltage (BVdss) of 100V and a continuous drain current (Id) of 100A. It has an on-state resistance (RDSon) as low as 6Ω. With these specifications, it can handle medium to high power loads with ease. This makes the device suitable for a number of applications, including power switching, powerconverters, H-bridges, motor drives, etc.

The versatility of the IRFZ24SPBF allows it to be used in a variety of circuits including switching, linear and level-shifting applications. The device can also be used as part of a switch-mode power supply circuit, which is used to control the output voltage of a device, such as a laptop charger or an LED driver.

The IRFZ24SPBF is a rugged and reliable MOSFET that can be used in a diverse range of applications. It has an extremely high voltage, current and power ratings, enabling it to handle a variety of power management tasks. Moreover, its low on-state resistance ensures minimal losses, making it an ideal power management tool.

The specific data is subject to PDF, and the above content is for reference

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