IRFZ48L Allicdata Electronics
Allicdata Part #:

IRFZ48L-ND

Manufacturer Part#:

IRFZ48L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 50A TO-262
More Detail: N-Channel 60V 50A (Tc) 3.7W (Ta), 190W (Tc) Throug...
DataSheet: IRFZ48L datasheetIRFZ48L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 18 mOhm @ 43A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRFZ48L is a type of single N-Channel MOSFET with wide range of applications. It is a type of transistors that is highly popular for its excellent functionality. The device has very low on-state resistance, and high performance in switching applications. It is ideal for use in power supplies and AC/DC rectification.

It has a maximum drain-source voltage of 60 volts, making it capable of handling high current applications. The package style is through-hole, making it easy to use and convenient. This device can produce fast switching speeds, making it perfect for high power applications.

The working principle of IRFZ48L is relatively simple. The device operates as a voltage controlled switch, operated by the drain-source voltage. When the voltage applied to the drain-source exceeds a certain threshold, the conducting channel between the source and drain is created, allowing the device to conduct electric current. When the drain-source voltage is below the threshold, the device is in the off-state.

There are many applications of IRFZ48L, such as in power supplies, DC-DC converters, rectifiers, switches and as a switching component in LED lighting. It is also used in microcontrollers for circuit protection and amplifier circuits. The device can provide very low on-state resistance, allowing for efficient and rapid switching.

The IRFZ48L is particularly useful in RF applications, as it is well suited for switching high frequency signals. This is due to its high performance characteristics, such as low input capacitances and RDS(on) values. It is also very reliable, making it ideal for long term use.

In summary, IRFZ48L is a single N-channel MOSFET with many applications in switching, rectification and power supplies. The device has very low on-state resistance and a maximum drain-source voltage of 60 volts. It has a working principle of voltage control, and is ideal for use in high power and high frequency applications.

The specific data is subject to PDF, and the above content is for reference

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