Allicdata Part #: | IRLR7821CTRRPBF-ND |
Manufacturer Part#: |
IRLR7821CTRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 65A DPAK |
More Detail: | N-Channel 30V 65A (Tc) 75W (Tc) Surface Mount D-Pa... |
DataSheet: | IRLR7821CTRRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1030pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 75W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IRLR7821CTRRPBF is a revolutionary type of field-effect transistor (FET) that is designed for use in advanced power electronics applications. This type of device is commonly used in a wide range of different equipment including communications, medical electronics, industrial applications, and automotive systems. The technology behind this FET is primarily used to reduce the amount of power and increase the efficiency of the overall system.
A FET is essentially a transistor, so it consists of several important parts. The primary components of this type of device are the source, drain and gate terminals. Each terminal has a specific role in the functioning of the device. The source terminal is the input and provides electrical current to the drain terminal, which is the output. The gate terminal acts as a switch that turns the FET on or off. This is accomplished by changing the voltage applied to the gate terminal.
IRLR7821CTRRPBF utilizes advanced Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) technology, which primarily uses a metal gate oxide to control the flow of current between the drain and the source. This type of device is designed for low-noise operation, high efficiency and low power consumption. In addition, it is also designed to dissipate heat easily, which makes it ideal for applications that involve high temperatures and exposure to hazardous elements.
The most noticeable feature of IRLR7821CTRRPBF is its advanced level of control over the flow of power and energy to a load. When an appropriate voltage (between 3 and 16 volts) is applied to the gate it sets the resistance level of the device, thereby controlling the amount of current that passes through it. The higher the voltage on the gate, the lower the resistance and the higher the available current.
In addition to controlling the current flow, IRLR7821CTRRPBF also offers protection from short circuits and overvoltage conditions. This improves the overall reliability of the device and increases its durability. Furthermore, its small size makes it easy to incorporate into tight layouts. This makes it a perfect choice for many applications.
Overall, IRLR7821CTRRPBF offers a wide range of benefits for the power electronics market. It offers superior performance, enhanced efficiency, and improved reliability in a small and robust package. This makes it an ideal choice for both industrial and consumer power applications.
The specific data is subject to PDF, and the above content is for reference
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