
IRLR014TRPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRLR014PBFTR-ND |
Manufacturer Part#: |
IRLR014TRPBF |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 7.7A DPAK |
More Detail: | N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surfac... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.28000 |
10 +: | $ 0.27160 |
100 +: | $ 0.26600 |
1000 +: | $ 0.26040 |
10000 +: | $ 0.25200 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 8.4nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 4.6A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 7.7A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRLR014TRPBF is a fast intra-series logic level enhancement mode field effect transistor (FET) that is specially designed to drive high current at a low voltage. It is typically used in switching applications such as load switching, inverters, and converters.
The IRLR014TRPBF belongs to the IRLR014PBF product family which is commonly used in high-performance, low-power designs. The FET has a unique combination of characteristics that makes it suitable for a wide range of applications. It features an integrated gate and source protection, low on-resistance, and low capacitance and gate charge. The FET is also tolerant to power cycling and is designed with a low inductance package.
The IRLR014TRPBF has an ON-resistance of 2.0mΩ at a gate to source voltage of 3V. It has a gate-source breakdown voltage of 12V and a drain-source breakdown voltage of 40V. The gate is also capable of withstanding up to 20V. The maximum allowable power dissipation of the FET is 150W.
The IRLR014TRPBF is an N-channel device that works on the principle of field effect action. This FET is designed with a current flow from the drain to the source, which is called the operating mode. When the gate voltage is increased above the threshold voltage, the device turns ON and allows current flow from the drain to the source. When the gate voltage is reduced to below the threshold voltage, the device turns OFF and no current is allowed to flow.
The IRLR014TRPBF is suited for a wide range of applications. It can be used in high-side switching, low-side switching, level shifting, load control, power control, and power factor correction. It is also used in applications such as motor controls, lighting controls, and audio amplifiers.
The IRLR014TRPBF is a highly reliable device that is widely used in a variety of industrial, telecommunications, medical, military, and automotive applications. It is an ideal choice for a wide range of requirements where high-speed switching and high current carrying capability are required.
The specific data is subject to PDF, and the above content is for reference
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IRLR3715ZTRLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 49A DPAKN... |
IRLR3714 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 36A DPAKN... |
IRLR8113TRLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 94A DPAKN... |
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IRLR2705TRLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 28A DPAKN... |
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IRLR2905ZTRPBF | Infineon Tec... | -- | 15000 | MOSFET N-CH 55V 42A DPAKN... |
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IRLR4343 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 26A DPAKN... |
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