Allicdata Part #: | IRLR110-ND |
Manufacturer Part#: |
IRLR110 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 4.3A DPAK |
More Detail: | N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surfa... |
DataSheet: | IRLR110 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 6.1nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 2.6A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRLR110 is a drain-source voltage referenced current regulating MOSFET (VRCMOS) designed for automotive, medical and industrial applications. It offers the best of both worlds: it can regulate drain-source current in constant and variable terms, plus it offers a host of useful features. The IRLR110 features an integrated charge pump, P-channel and N-channel MOSFETs with common source/drain/gate-drain connections, and low voltage operation.
The IRLR110 can be used to regulate drain-source current in a variety of applications. It is used in switch mode power supplies, regulators and drivers, as well as applications such as LED lighting, AC and DC motor drives, load control and lighting dimming. Its low voltage operation allows it to be used in low speed, low power circuits, and its integrated charge pump, P-channel and N-channel MOSFETs make it particularly attractive for space-constrained designs.
The working principle of the IRLR110 is based on the constant drain-source current that is established by the voltage reference (Vref). The voltage reference is designed to operate down to 0.4V, and provides a high degree of accuracy and low temperature coefficient. The voltage reference is connected to a P-channel MOSFET and an N-channel MOSFET, which are connected in parallel and jointly act as current regulating devices. The P-channel MOSFET will turn ON when the voltage reference is lower than the drain-source voltage, while the N-channel MOSFET will turn OFF when the voltage reference is higher than the drain-source voltage.
The voltage reference is connected to the gate of the N-channel MOSFET. When the voltage reference is higher than the drain-source voltage, the P-channel MOSFET turns ON, while the N-channel MOSFET turns OFF. This causes the drain-source current to be regulated.
The IRLR110 also features integrated protection from short circuit and overtemperature conditions. This is accomplished by monitoring the internal temperature of the device and turning OFF the P-channel MOSFET when the temperature exceeds a predefined limit. This ensures that the device does not suffer any permanent damage.
The IRLR110 is a versatile and reliable MOSFET with an excellent performance under a wide range of temperatures. It is easy to configure and use, and can be used in applications requiring a variety of current regulated solutions. Its integrated charge pump increases the efficiency of the design, and its low voltage operation allows it to be used in applications that require a variety of power levels.
The IRLR110 is an ideal choice for a variety of applications requiring adjustable current regulation, high accuracy and reliability. It is well-suited for automotive, industrial and medical applications, and its features make it a cost-effective solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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