| Allicdata Part #: | IRLR8743TRPBFTR-ND |
| Manufacturer Part#: |
IRLR8743TRPBF |
| Price: | $ 0.43 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 160A DPAK |
| More Detail: | N-Channel 30V 160A (Tc) 135W (Tc) Surface Mount D-... |
| DataSheet: | IRLR8743TRPBF Datasheet/PDF |
| Quantity: | 77 |
| 1 +: | $ 0.43000 |
| 10 +: | $ 0.41710 |
| 100 +: | $ 0.40850 |
| 1000 +: | $ 0.39990 |
| 10000 +: | $ 0.38700 |
| Vgs(th) (Max) @ Id: | 2.35V @ 100µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 135W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4880pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 3.1 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The IRLR8743TRPBF is a Programmable Active (Prog SA) PowerMOSFET by Infineon Technologies Corporation. It is part of the OptiMOS™ low-voltage power MOSFET family, providingvery low resistance, as well as very small gate overture capacitance and internal capacitance. This article is a discussion of the application field and working principle of the IRLR8743TRPBF MOSFET.
Features of the IRLR8743TRPBF
The IRLR8743TRPBF features a 23A drain current rating, 10A continuous drain current and Low On-Resistance of85mΩ maximum at 5V gate drive. It also has a low gate charge of 2.8nC (TYP) enables low system losses and fastswitching behavior compared to alternative solutions. It features a high-rise and low-rise time of 12ns maximum and12ns minimum respectively. Other features include an ultra-low gate-drain charge of 0.7nC (TYP) for high-speedswitching, an operating voltage range of -55 to -25V, an operating temperature range of -55 to +175°C, and asilicon dielectric breakdown voltage of 800V.
Application Field of IRLR8743TRPBF
The IRLR8743TRPBF offers excellent performance in low-voltage applications such as DC-DC converters, lightcontrol, industrial motor control and automotive powertrain. It can be used as a high-side or low-side switch inDC/DC converters and a low-side switch in power distribution systems. It is also suitable for light dimming, motorcontrols, and other power control applications. The IRLR8743TRPBF is also suitable for automotive applicationssuch as body control, lighting and engine control.
Working Principle of IRLR8743TRPBF
The IRLR8743TRPBF is a power MOSFET based on the MOSFET (Metal Oxide Semiconductor Field EffectTransistor) structure. This means that its primary purpose is to provide switching between a power source and aload. The transistor contains a source electrode, a drain electrode, and a gate electrode. The gate electrode isenergized with a gate voltage, which causes a conducting channel to form between the source and drain electrodes.This conducting channel allows current to flow between the source and drain electrodes. By controlling the GateVoltage, the current flowing between the source and drain can be regulated.
The IRLR8743TRPBF has a very low on-resistance as well as a very small gate-drain capacitance and internalcapacitance. This combination of features allows for very fast switching between the source and drain electrodes.Moreover, the low internal capacitance and the low gate charge allow for very low system losses and fast switchingbehavior compared to alternative solutions.
Conclusion
The IRLR8743TRPBF is a highly versatile power MOSFET that is suitable for applications in low-voltage systemssuch as DC-DC converters, light control, industrial motor control and automotive powertrain. It features a 23Adrain current rating, 10A continuous drain current and Low On-Resistance of 85mΩ maximum at 5V gate drive.Additionally, its high-rise and low-rise time of 12ns maximum and 12ns minimum respectively allows for veryfast switching time. It also has a very low gate charge, which allows for low system losses. All together, thesefeatures make the IRLR8743TRPBF a highly desirable option in many applications.
The specific data is subject to PDF, and the above content is for reference
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IRLR8743TRPBF Datasheet/PDF