IRLR8503TR Allicdata Electronics
Allicdata Part #:

IRLR8503TR-ND

Manufacturer Part#:

IRLR8503TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 44A DPAK
More Detail: N-Channel 30V 44A (Tc) 62W (Tc) Surface Mount D-Pa...
DataSheet: IRLR8503TR datasheetIRLR8503TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRLR8503TR is a type of enhanced power MOSFET transistor, used in the field of power electronics. Its core function is to switch loads with minimal minimal loss and distortion. The great advantage of IRLR8503TR is that it provides sufficent power rating at low gate voltage and high drain current. It is ideal for high power, low noise and low EMI applications.

The IRLR8503TR is a depletion mode, N-channel vertical DMOS transistor that operates in the current-voltage or the drain to source region. It has high efficiency, low driving power, low on-state resistance and high off-state breakdown voltage. The device has a drain to source voltage rating of up to 40 V, a drain current rating of up to 82 A/200 mΩ, a gate-to-source voltage rating of up to ±20 V, and an off-state breakdown voltage rating of up to 83 V.

At the core of the IRLR8503TR is a vertical DMOS transistor manufactured using a planar process and composed of a silicon substrate with a shallow N-type vertical conduction channel. At the top of the device is a heavily-doped drain contact, below which is an N-type doped, lightly-doped drift region. Then comes a P-type well, followed by the heavily-doped, N-type source contact.

In order for the IRLR8503TR to function, the gate-to-source voltage must be applied to it. The voltage applied to the gate modulates the width of the conduction channel through a reciprocal function, and the voltage then changes the charge accumulated in the channel. When the channel width is increased, the conduction channel between the gate and the source increases, and this allows for a larger current flow from the drain to the source.

The IRLR8503TR has a wide range of uses in power electronics, as it is suitable for a variety of applications. It is used in power supply circuits, motor drives, high-voltage converters, and other applications that require high switching speed, low on-state resistance, and high reliability. It can also be used in applications such as power tools, automotive power distribution systems, power conditioning systems, and solar inverters.

The IRLR8503TR is an important component in power electronics and has a wide range of applications. It is a reliable and efficient device, capable of operating with minimal distortion and power loss. It is suitable for a wide range of applications, as it has a high on/off ratio and can handle a high drain current and a low gate voltage.

The specific data is subject to PDF, and the above content is for reference

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