![IRLR7821PBF Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRLR7821PBF-ND |
Manufacturer Part#: |
IRLR7821PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 65A DPAK |
More Detail: | N-Channel 30V 65A (Tc) 75W (Tc) Surface Mount D-Pa... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1030pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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IRLR7821PBF is a new generation of N-channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) for low voltage, high current and small size applications. This product is designed specifically for its low voltage and high current properties. It is a device intended primarily for power supply applications. It is suitable for use as a switch or relay in custom applications, as it can handle high current while maintaining low resistance with very low on-state voltage drop.
The basic working principle of the IRLR7821PBF is fairly easy to understand. Essentially, the device works through the application of a voltage to a small gate electrode. When this voltage is applied, electrons are pulled from the body region of the transistor, creating a very thin layer of positively charged ions on the other side of the device. This layer of positively charged ions in turn attracts free electrons to create a strong electric field. This field helps turn the device on, allowing current to flow from the source to the drain of the FET.
The IRLR7821PBF is designed for Logic level applications as an inexpensive, high efficiency and low (ON-state) voltage drop. It is a device that is suitable for use in a switch or other complex electrical applications that demand high current flow and low ON-state voltage drop. Since the IRLP7821PBF is an N-channel device, the ON-state voltage drop is lower than the equivalent P-channel variant, making it the preferred choice in many designs. The device has an extremely low off-state leakage current and is capable of operating at high frequencies, making it especially suitable for power switching applications.
The IRLR7821PBF offers many advantages, including its very low on-state and off-state leakage currents, its very low input capacitance, its low gate resistance, and its superior thermal performance, making it ideal for switching applications with high-frequency pulses. The device is also capable of providing high voltage isolation between source and drain, eliminating the need for additional isolation components in applications such as switching power supplies. Its low power consumption and low power dissipation, mean that the device can be used in compact designs and is especially desirable for battery-powered applications.
In conclusion, the IRLR7821PBF is an excellent choice for low voltage, high current and small size applications, such as switching and relay applications. Its low power consumption, excellent thermal performance and very low input capacitance and gate resistance make it especially suitable for a variety of applications. The device also offers superior thermal performance and low power consumption, making it a great choice for battery powered applications and other applications that require low voltage drops. With its low power consumption, fast switching time and superior thermal performance, the IRLR7821PBF is an excellent choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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