IRLR230ATF Allicdata Electronics
Allicdata Part #:

IRLR230ATF-ND

Manufacturer Part#:

IRLR230ATF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 200V 7.5A DPAK
More Detail: N-Channel 200V 7.5A (Tc) 2.5W (Ta), 48W (Tc) Surfa...
DataSheet: IRLR230ATF datasheetIRLR230ATF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.75A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRLR230ATF is a silicon N-Channel MOSFET which is specially manufactured for use in high-speed power switching applications. This component is typically used in motor control, inverters, switching regulators, and power supplies. It features a maximum ratings of 30 volts and 25 amperes, and it is designed for operation at temperatures ranging from -55°C to +150°C. The IRLR230ATF has a low on-state resistance and a low gate-source threshold voltage, making it ideal for applications that require lower power dissipation and faster turn-on times.

The IRLR230ATF has a vertical N-channel MOSFET design which is fully isolated from the substrate. It has a low on-state resistance (RDSon) of 34 milliohms when it is operated at 25 degrees Celsius. This component also has a low gate-source threshold voltage (Vgs) of 3.2 volts, ensuring that it will turn on quickly with minimal power. It also has a low gate charge (Qgs) of 7.8 nanocoulombs, thus reducing the power it takes to drive the gate.

To work properly, the IRLR230ATF needs to be connected to the supply voltage and the load, as well as the ground. A voltage is applied to the gate, which activates the transistor’s internal electrical field. This electrical field creates a channel between the source and the drain terminals, allowing current to flow between them. The higher the applied voltage, the larger the channel and the more current that can flow through it. Once the gate voltage is removed, the channel is destroyed and the transistor is no longer in the on state.

The IRLR230ATF is also manufactured with a built-in drain-source diode, which is used to protect the transistor from voltages that are much higher than the supply voltage. This particular MOSFET is also capable of being avalanche rated, which means it is especially resistant to extreme current flows.

In summary, the IRLR230ATF is a specially designed vertical N-channel MOSFET that is suitable for a variety of high-speed power switching applications. It features a low RDSOn of 34 milliohms, low Vgs of 3.2 volts and low Qgs of 7.8 nanocoulombs, and also comes with a built-in diode for protection from overvoltages. The IRLR230ATF is also available in avalanche rated designs, making it a great choice for high-current applications.

The specific data is subject to PDF, and the above content is for reference

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