IRLR7807ZCTRRP

Vgs(th) (Max) @ Id:	2.25V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	780pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	11nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	13.8 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	43A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction to IRLR7807ZCTRRP

The IRLR7807ZCTRRP is a low voltage n-channel powerMOS (metal oxide semiconductor) FET (Field Effect Transistor) with improved RDS on-state resistance and enhanced PWM (pulse width modulation) switching performance. This particular FET is designed to offer excellent efficiency in general purpose applications. This FET is also known as a logic-level MOSFET, because it can conduct at a voltage as low as 5 volts.

Application field of IRLR7807ZCTRRP

The IRLR7807ZCTRRP can be used in a wide range of applications, such as power management in low voltage systems, DC-DC converters, AC-DC power supplies, audio amplifiers, and motor controllers. This FET is also ideal for portable and LED lighting applications.

Working Principle of IRLR7807ZCTRRP

The IRLR7807ZCTRRP is a low voltage n-channel MOSFET, which means that it consists of n-type semiconductor material sandwiched between two gate electrodes. These gate electrodes are located on the surface of the semiconductor and are separated by a thin insulating layer. Applying a voltage to the gate electrodes will cause electrons to flow between the electrodes, thereby forming an electric field between the two. This electric field modulates the current between the drain and source terminals, thereby controlling the flow of current through the FET.The current-voltage characteristics of the IRLR7807ZCTRRP are also optimized for efficient switching performance. This is due to the low RDS on-state resistance and an optimized threshold voltage, which allow for more efficient control of current.

Conclusion

In conclusion, the IRLR7807ZCTRRP is an excellent choice for a number of applications, due to its low voltage n-channel MOSFET technology and optimized switching performance. This FET can be used in a wide range of applications, from power management to audio amplifiers, making it a versatile and reliable solution.

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