IRLR110ATF Allicdata Electronics
Allicdata Part #:

IRLR110ATF-ND

Manufacturer Part#:

IRLR110ATF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 4.7A DPAK
More Detail: N-Channel 100V 4.7A (Tc) 2.5W (Ta), 22W (Tc) Surfa...
DataSheet: IRLR110ATF datasheetIRLR110ATF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 22W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 440 mOhm @ 2.35A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRLR110ATF is a high performance complementary metal oxide semiconductor (CMOS) field effect transistor (FET). It is part of the family of high-speed, low-power CMOS FETs known as MOSFETs or Metal Oxide Semiconductor FETs. This type of FET is typically used in signal processing applications such as data switching, power conversion and signal amplification. This article will discuss the application fields and working principles of the IRLR110ATF.

Application Fields
The IRLR110ATF is used in a variety of different applications, most notably power electronics and signal processing. Power electronic applications can include various power supplies, motor drivers, solenoid and relay drivers, DC-DC converters and power management. The IRLR110ATF\'s high-speed, low-power performance is critical for these types of applications. In signal processing applications, the IRLR110ATF is commonly used for signal amplification, switching and routing. It is also used in digital imaging systems, telecommunications and other electronic systems.

Working Principle
The IRLR110ATF is a N-channel MOSFET, which means that when it is turned on, its drain terminal receives current from its source terminal, thus allowing electricity to flow through the device. The working principle of the IRLR110ATF is based on the principle of electrostatics, which states that opposite charges attract, while like charges repel. The operation of the IRLR110ATF involves the application of a gate voltage, or the amount of voltage required to open or close the switch. When a positive gate voltage is applied, the electrons on the FET’s conductive channel are repelled away from the gate, creating a conductive path from source to drain. When the gate voltage is removed, the electrons are drawn back to the gate and the FET is turned off.

The IRLR110ATF is designed for optimum performance in high-frequency and high-current applications. It offers excellent switching characteristics with high on-resistance and low gate capacitance. It also has a low threshold voltage, which reduces power consumption in signal amplification applications. The IRLR110ATF is designed for operation over a wide temperature range and can handle a maximum drain current of 11A.

The IRLR110ATF is an excellent choice for signal processing and power electronics applications due to its high-speed, high-current and low-power performance. It offers excellent switching characteristics, as well as a low gate capacitance and threshold voltage. It can also handle high temperatures, high frequencies and large drain currents. The IRLR110ATF is a great choice for signal amplification, switching, routing and power management applications.

The specific data is subject to PDF, and the above content is for reference

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