IRLS3034-7PPBF Allicdata Electronics
Allicdata Part #:

IRLS3034-7PPBF-ND

Manufacturer Part#:

IRLS3034-7PPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 240A D2PAK-7
More Detail: N-Channel 40V 240A (Tc) 380W (Tc) Surface Mount D2...
DataSheet: IRLS3034-7PPBF datasheetIRLS3034-7PPBF Datasheet/PDF
Quantity: 42
Stock 42Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package: D2PAK (7-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 380W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 10990pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 200A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IRLS3034-7PPBF is a type of Field Effect Transistor (FET). This type is also known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), and is a single transistor. This type of FET is used mainly in the automotive industry, due to its high performance characteristics.

The FET is composed of two terminals, the gate and the source. The gate is the control mechanism of the device and the source is the input of the device. When the voltage level at the gate is increased, the device will conduct current between the source and the drain. The amount of current that is able to flow through the device is determined by the voltage level at the gate.

The IRLS3034-7PPBF FET has several advantages when compared to its competitors. Firstly, it is able to operate at a wider range of temperatures, from -55°C to 175°C. This make the device better suited for applications in harsh environments, where other devices might not be able to survive. Secondly, the IRLS3034-7PPBF FET has a wide gate voltage range, from -7V to +20V, making it suitable for a variety of applications. The device also has a higher breakdown voltage, of 200V, and lower on-resistance, meaning that it can handle more current and has a lower power consumption.

The IRLS3034-7PPBF FET can be used in many different applications, from switches and relays to signal amplifiers and power management. In switches, the FET can be used to control the flow of electricity, allowing the user to turn circuits on and off. In relays, the FET can be used to control the flow of electricity over long distances, allowing for remote control of a circuit. A signal amplifier, also known as a voltage buffer, is used to boost the signal strength of a voltage source and provide it to another circuit. Finally, the IRLS3034-7PPBF FET can be used in power management, providing a means to control the amount of power being used and ensuring the correct voltage is supplied.

In summary, the IRLS3034-7PPBF FET is an excellent choice for a variety of applications, due to its wide operating temperature range, wide range of gate voltages and higher breakdown voltage. Its ability to control the flow of electricity, boost signal strength and manage power makes it invaluable in many different applications.

The specific data is subject to PDF, and the above content is for reference

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