IRLS3034PBF Allicdata Electronics
Allicdata Part #:

IRLS3034PBF-ND

Manufacturer Part#:

IRLS3034PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 195A D2-PAK
More Detail: N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount D2...
DataSheet: IRLS3034PBF datasheetIRLS3034PBF Datasheet/PDF
Quantity: 165
Stock 165Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 10315pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 195A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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The IRLS3034PBF is a single channel, field-effect transistor (FET) that is designed especially for high-voltage applications in the circuit industry. The device is part of a family of FETs that are specifically designed to be able to operate safely in a wide range of operating conditions. It is ideal for use in low-power, non-isolated DC/DC converters, as well as other applications where high-voltage switching is required.

The IRLS3034PBF is designed with a breakdown voltage rating of 30V and a gate source voltage of 10V which ensures that the device will not be damaged by excessive voltages. It is rated at 25A and 350V, making it ideal for use in high-power switching applications. The device also includes a built-in thermal protection feature that limits its power dissipation and prevents it from being damaged by excessive heat.

The IRLS3034PBF is a N-channel FET and its gate works by passing a voltage signal to the drain of the device. The voltage passing through the drain allows current to flow from the source to the drain. The gate is typically driven by a control signal, such as a pulse-width modulation (PWM) control signal. This allows the current flow to be accurately controlled and switched quickly.

The device works by controlling the amount of current that can flow between the source and the drain when voltage is applied to the gate. When the gate voltage is zero, no current can flow between the source and the drain. As soon as a gate voltage is applied, the current can flow between the source and the drain. The amount of current that is allowed to flow is determined by the gate voltage and the resistive load on the drain side. This feature makes the device particularly suited for low-noise operation.

The IRLS3034PBF is also designed with an integrated shielded gate construction which helps to reduce the amount of noise generated by the device. This reduces the potential for interference from other components in the circuit and helps to ensure a noise-free operation. The integrated shielded gate also helps to reduce the amount of power consumed by the device, which makes it an efficient switch for applications that require a low power consumption.

The IRLS3034PBF is a reliable and efficient device for use in a variety of applications. It is suited for use in high-voltage switching applications, such as low-power, non-isolated DC/DC converters, as well as other applications where high-voltage switching is required. It is also designed to be capable of operating safely in a wide range of operating conditions and has a built-in thermal protection feature that limits power dissipation and prevents it from being damaged by excessive heat.

The specific data is subject to PDF, and the above content is for reference

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