IRLS3036TRL7PP Allicdata Electronics
Allicdata Part #:

IRLS3036TRL7PPTR-ND

Manufacturer Part#:

IRLS3036TRL7PP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 240A D2PAK-7
More Detail: N-Channel 60V 240A (Tc) 380W (Tc) Surface Mount D2...
DataSheet: IRLS3036TRL7PP datasheetIRLS3036TRL7PP Datasheet/PDF
Quantity: 4000
Stock 4000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package: D2PAK (7-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 380W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 11270pF @ 50V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 180A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRLS3036TRL7PP is a PowerPAD HEXFET power MOSFETs with a maximum drain-source voltage rating of 40 V. This device is a single N-channel MOSFET with a low on-resistance of 4.0 mΩ and a low gate charge of 9 nC, which together make it ideal for high-density, low-voltage applications. It is also characterized by a good ruggedness against electrical load variation and good thermal stability.

This device has many useful characteristics and applications. The low on-resistance of 4.0 mΩ makes it ideal for low-voltage applications such as buck regulators and DC-DC converters. It can also be used for power switches and loads, or for controlling the switching frequency of DC motors. Additionally, the low gate charge of 9 nC makes it suitable for high-frequency switching.

The working principle of IRLS3036TRL7PP device is based on the principles of MOSFETs. In this device, voltage from the gate terminal is applied to gate oxide, forming a channel between source and drain. The current flowing in this channel is directly proportional to the voltage applied on the gate. The on-resistance of the device is directly affected by the thickness of the gate oxide layer and the applied voltage.

The device also has a built-in protection mechanism that helps protect the device against power surges and overloading. This includes a body-drain clamp (which operates like an active back-to-back diode) to protect against power surges and a junction temperature sense (JTS) system to detect overloading and prevent hot-spot damage.

Overall, the IRLS3036TRL7PP is a powerful, low-voltage power MOSFET with a low on-resistance and a high gate charge that makes it suitable for high-density and high-frequency applications. It has excellent ruggedness, thermal stability and built-in protection mechanisms.

The specific data is subject to PDF, and the above content is for reference

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