IRLS3036-7PPBF Allicdata Electronics
Allicdata Part #:

IRLS3036-7PPBF-ND

Manufacturer Part#:

IRLS3036-7PPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 240A D2PAK
More Detail: N-Channel 60V 240A (Tc) 380W (Tc) Surface Mount D2...
DataSheet: IRLS3036-7PPBF datasheetIRLS3036-7PPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: HEXFET®
Packaging: Tube 
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 180A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 4.5V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 11270pF @ 50V
FET Feature: --
Power Dissipation (Max): 380W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Description

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IRLS3036-7PPBF is a single N-channel low-field MOSFET which is manufactured by International Rectifier, which provides low resistance and fast switching capabilities required in switching applications. It is specially designed with unique features so that it not only provides excellent performance when used in high frequency switching applications due to low gate charge, fast switching speed and low on-state resistance as well as its ability to efficiently drain/source currents when used in low-frequency switching applications.The IRLS3036-7PPBF is used in various applications such as switching power supplies, DC-DC converters, motor control, LED lighting and switch mode regulation systems. It is designed to be used in the automotive industry, in which the MOSFET is utilized for high-side or low-side switching, which allows for efficient power use and minimized power loss.The IRLS3036-7PPBF is a single N-channel MOSFET based on the metal-oxide-semiconductor field-effect transistor (MOSFET) technology. This device is a voltage-controlled device, meaning that the source and drain current is controlled by voltages applied to the device\'s gate. This MOSFET device is a bidirectional device, meaning that it can provide current in either direction depending on the gate voltage applied.The basic operation of an N-channel MOSFET is as follows: when a positive voltage voltage is applied to the gate terminal, the MOSFET becomes conductive, allowing current to flow from drain to source. The current is limited by the resistance in the channel that exists between the source and drain electrodes. Conversely, when a negative voltage is applied to the gate, the MOSFET becomes non-conductive, effectively blocking current from flowing from drain to source.The IRLS3036-7PPBF is a high-performance device which provides fast switching speeds and low on-state resistance. It is made using the patented SuperBRC technology which is a patented trench process technology developed by International Rectifier. This technology provides excellent performance in terms of faster switching speeds, low on-state resistance and improved power efficiency with minimal power loss.The IRLS3036-7PPBF can be used in various applications such as high-side and low-side switching, DC-DC converters, switching power supplies, power management, motor control, LED lighting, and switch mode regulation systems. It is engineered for extreme environments and automotive applications, making it suitable for applications that require reliable and durable performance.It is important to note that in order to achieve the desired performance from the IRLS3036-7PPBF, it is important to properly design the circuit. In general, the gate and source connections should be bypassed with a low-ESR capacitor and the source should be decoupled from the drain to reduce parasitic inductance which could result in ground bounce or switching errors.In conclusion, the IRLS3036-7PPBF is a high-performance single N-channel low-field MOSFET that is engineered to provide fast switching speeds, low on-state resistance, and reliability in extreme environments. The MOSFET is used in various applications such as switching power supplies, DC-DC converters, motor control, LED lighting and switch mode regulation systems. It is important to properly design the circuit to ensure the desired performance is achieved.

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