IRLS3813TRLPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRLS3813TRLPBF is a single channel sensitive gate, depleted mode, N-channel enhancement mode and vertical DMOS transistor from Infineon Technology. This transistor is specifically designed for absolute maximum ratings of power dissipation, resistance, and dielectric strength. This transistor is capable of operating up to 6V and withstanding up to 3.36A of continuous current. It is an advanced power device technology which makes it suitable for a variety of applications.

The IRLS3813TRLPBF is recommended for use in high power loads, switching power supplies, motor drives, and other power management applications. It is used to switch high currents and can provide efficient operation while consuming low power. It is also suitable for use in applications that require high current handling, such as motor drives, switches, and power supply regulation.

The IRLS3813TRLPBF has an internal shield construction which provides excellent noise suppression and temperature stability. The device can handle up to 3.36A of continuous current and 75A of pulsed current, making it a suitable device for high currents. The device also features an RDS(on) of 41mohm, which allows it to maintain low ON-resistance under a variety of operating conditions.

The IRLS3813TRLPBF has two terminals: Source and Drain. The Source terminal is the negative gate lead, meaning that when the gate is biased, it is pulled low. The Drain terminal is the positive gate lead and when it is biased it is pulled high. The Device is also equipped with ESD protection and has been designed with Thermal Shutoff Shutdown, which is triggered if the junction temperature rises above the specified limit.

The working principle of the IRLS3813TRLPBF can be best understood using its three categories of operation which are bias, logic, and protection. In its bias operation the device is used primarily to control the gate-source, drain-source, gate to the source and the drain to the source voltage of the device. This allows the current to be regulated, either in a linear or a switch mode, depending on the desired application. The device also has a logic operation that allows a combination of logic circuitry and signals to be used to control the gate voltage. This gives greater control of the current applied to the device for specific applications. Lastly, the device has a protection circuit that is used to protect the device from overcurrent and overexposure to heat by tripping and shutting down the device if necessary.

In summary the IRLS3813TRLPBF is a single channel sensitive gate, depleted mode, N-channel enhancement mode and vertical DMOS transistor from Infineon. It is used in various applications that require high current and efficient operation such as motor drives, switches, and power supplies. It has an internal shield construction that reduces noise, and temperature stability as well as an RDS(on) of 41mohm which allows it to maintain low on-resistance in a variety of operating conditions. Its three categories of operation are bias, logic and protection and it has a protection feature that can trip and shut down the device when necessary. The device can handle up to 3.36A of continuous current and 75A of pulsed current making it suitable for high power applications.

The specific data is subject to PDF, and the above content is for reference