IRLSL4030PBF

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The IRLSL4030PBF is a symmetrically-balanced N-Channel Power MOSFET. It’s a single MOSFET that can handle twice the current of an equivalent unbalanced transistor, so it’s often a good choice for applications such as pulse width modulators, DC-DC converters, or any other application where high gain and high current capacity is needed.

IRLSL4030PBF Application Fields

The IRLSL4030PBF is well suited for applications such as DC-DC converters, pulse width modulator circuits, switching regulators and motor drives. Its symmetrical structure allows it to efficiently handle both positive and negative signals, so it’s especially useful in power supplies that use PWM to control the voltage. It’s also well suited for use in low-noise switched-mode power supplies, audio amplifiers and SMPS switching regulators.

Because of its higher current handling capabilities, the IRLSL4030PBF is also often used in industrial and consumer applications, such as computer power supplies, consumer electronics and car audio systems. Its wide gate voltage range allows it to be used in applications from 3V to 12V, and its low source-drain resistance makes it ideal for low-voltage, high-current switching applications.

IRLSL4030PBF Working Principle

At the heart of the IRLSL4030PBF are two back-to-back N-channel MOSFETs. Each individual MOSFET is connected to a common floating gate, which operates as a voltage-controlled switch. When a voltage is applied to the flow gate, it creates an electric field that lowers the threshold voltage of both transistors, allowing them to become conducting. By controlling the amount of voltage applied to the gate, the current flowing through the MOSFETs can be updated.

The symmetrical construction of the device also makes it well suited for multiple switching applications. The symmetrical configuration means that both transistors are equally weighted when a voltage is applied to the gate. This allows them to both be conducting, or both be non-conducting, depending on the gate voltage, which is great for applications that require high switching speeds and low time constants.

The IRLSL4030PBF also has a high drain-source breakdown voltage of 800V, which makes it suitable for use in applications with large voltage swings. It has a low on-resistance of 11.0 ohms, so it offers excellent power dissipation characteristics and can handle up to 16A of continuous current.

Conclusion

The IRLSL4030PBF is a symmetrically-balanced N-channel power MOSFET, offering high gain and high current capacity, making it an ideal choice for many applications. Its wide gate voltage range and low on-resistance make it well-suited for low-voltage, high-current switching applications, and its symmetrical construction allows for fast switching speeds and low time constants. With its high drain-source breakdown voltage and high current handling capabilities, the IRLSL4030PBF is a great choice for any application that requires reliable power MOSFETs.

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