IRLSL3036PBF Allicdata Electronics
Allicdata Part #:

IRLSL3036PBF-ND

Manufacturer Part#:

IRLSL3036PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 195A TO262
More Detail: N-Channel 60V 195A (Tc) 380W (Tc) Through Hole TO-...
DataSheet: IRLSL3036PBF datasheetIRLSL3036PBF Datasheet/PDF
Quantity: 764
Stock 764Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 380W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRLSL3036PBF is a power MOSFET type, a type of insulated-gate field-effect transistor (IGFET) that is commonly used in regulated power supplies and DC to DC converter designs. This type of transistor is ideal for use in applications where moderate-to-high power is required, such as industrial motor and power converter control. Due to its ruggedness and powerful capabilities, the IRLSL3036PBF is becoming increasingly popular in these applications.

The IRLSL3036PBF features a high-performance lateral N-channel MOSFET in a TO-220 package. The component is designed to have a low on-state resistance, and is rated for 30A at 25⌀C. The component also has a maximum voltage rating of 40V, making it suitable for low-voltage applications. The component also features low thresh hold voltage, and excellent temperature stability.

The fundamental operating principle of the IRLSL3036PBF is the same as any other power MOSFET. It consists of an oxide layer between the gate and source, which acts as an insulator. When a voltage is applied to the gate, a current starts to flow from the source to the drain. This current is referred to as the \'channel current\', and is a function of the gate-source voltage. The higher the gate-source voltage, the more current is allowed to flow.

The channel current is responsible for the power transfer between the source and the drain, and is controlled by the gate-source voltage. This is the basis of operation for the IRLSL3036PBF. By controlling the gate-source voltage, the amount of current that can flow through the transistor can be controlled. This makes it ideal for use in applications where precise power control and regulation are required.

The IRLSL3036PBF is ideal for a wide range of applications, from industrial motor control to DC to DC conversion, and even in automotive applications. The component is easy to use, requires minimal external components, and is relatively inexpensive compared to other power MOSFETs. Furthermore, the rugged design and low on-state resistance make it ideal for use in harsh conditions. All in all, the IRLSL3036PBF is an ideal transistor for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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