IRLS510A Allicdata Electronics
Allicdata Part #:

IRLS510A-ND

Manufacturer Part#:

IRLS510A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 4.5A TO-220F
More Detail: N-Channel 100V 4.5A (Tc) 23W (Tc) Through Hole TO-...
DataSheet: IRLS510A datasheetIRLS510A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 23W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 440 mOhm @ 2.25A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRLS510A is a type of field effect transistor (FET) commonly used as a low-resistivity device in various electrical circuits, as well as for a variety of switching tasks. It can be used to control current and voltage changes in electronic circuits, among other things, and it is often the preferred choice when relaying signals and in providing temperature control. This article will discuss the various application fields and working principles of IRLS510A.IRLS510A is a type of single-gate field effect transistor (FET) that works by manipulating its junction potential in order to control the current path through its channel. It is made up of a source region, a drain region and a channel region, with the gate electrode being connected to the first two of these areas. When the gate voltage is applied, it causes an increase in the voltage differential between the source and the drain regions, which in turn causes an increase in the current flow from the source to the drain. The junction potential controls the amount of current that can flow through the FET channel, and the higher the voltage applied to the gate, the greater the current.One of the primary application fields of IRLS510A is switching. It is often used in a variety of circuits as a low-resistivity device, as it can be used to reliably switch signals between two or more paths. This makes it a popular choice for signal relaying and data transfer. In addition to this, the transistor is often used for temperature control, as it is able to change its current and voltage output to regulate the temperature of an object or device.In addition to these applications, IRLS510A can also be used for analog signal processing. This is due to its ability to modulate an analog signal in order to produce a digital output, which can then be used to perform various operations. This makes it a useful device in audio equipment, as well as in digital signal processing.The working principle of IRLS510A is primarily based on the junction potential. This means that the voltage applied to the gate is what determines the amount of current that can flow through the FET channel. When the voltage is increased, more current is allowed to flow, and when it is decreased, the current flow is reduced. This is why the device is often used for temperature control, as the current output can be adjusted in order to regulate the temperature of an object or device.In conclusion, IRLS510A is a type of single-gate field effect transistor that is commonly used in switching, signal relaying and temperature control applications, as well as for analog signal processing. It works by manipulating the junction potential in order to control the current flow through its channel, and this makes it a reliable and dependable device for use in many different types of circuits.

The specific data is subject to PDF, and the above content is for reference

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