| Allicdata Part #: | IRLSL3034PBF-ND |
| Manufacturer Part#: |
IRLSL3034PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 40V 195A TO262 |
| More Detail: | N-Channel 40V 195A (Tc) 375W (Tc) Through Hole TO-... |
| DataSheet: |  IRLSL3034PBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 375W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 10315pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 162nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 195A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRLSL3034PBF is a common-source FET transistor manufactured by Renesas Electronics Corporation. It is a type of field-effect transistor (FET) that is designed to be used in a variety of applications. The IRLSL3034PBF has direct current (DC) characteristics which make it suitable for use in signal processing, switching and isolation, and power conversion applications.
The IRLSL3034PBF is a N-channel enhancement-mode FET with a maximum drain current of 0.9A and a maximum VDS of 55V. It is equipped with a temperature-sensing diode (T2) for over-temperature protection. It has a threshold voltage of 2.5V and a drain-source voltage of 55V. It is available in a TO-254AA package.
The IRLSL3034PBF has several features that make it ideal for use in a variety of applications. Its low gate charge and low gate-source voltage make it suitable for high-frequency applications. It has a fast switching speed and low on-state resistance, making it suitable for switching applications. The IRLSL3034PBF also has a low turn-on and turn-off delay time, making it ideal for signal processing applications. The high-temperature operating temperature range and over-temperature protection also make it ideal for use in power conversion applications.
The working principle of an IRLSL3034PBF is based on its FET characteristics. An FET is a four-terminal semiconductor device which is composed of two electrodes, the source and the drain, separated by a thin gate dielectric. The FET is operated in either enhancement mode or depletion mode. In enhancement mode, current flows between the source and drain when a voltage is applied to the gate. In depletion mode, current is blocked until a voltage is applied to the gate. The IRLSL3034PBF is operated in enhancement mode and its drain current is dependent on the gate voltage.
The IRLSL3034PBF is suitable for a variety of applications such as switching power supplies, audio amplifiers and data converters. It can be used in signal processing, switched-mode-power-supply (SMPS) and motor-control applications. The device is also ideal for use in automotive and high-temperature applications due to its temperature-sensing diode.
In conclusion, the IRLSL3034PBF is a common-source FET transistor which is suitable for use in a variety of applications due to its FET characteristics and its temperature-sensing diode. Its low gate charge and fast switching speed make it suitable for signal processing and power conversion applications. The device is available in a TO-254AA package and has a maximum drain current of 0.9A, a maximum VDS of 55V, and a threshold voltage of 2.5V.
The specific data is subject to PDF, and the above content is for reference
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