IRLS3036TRLPBF Allicdata Electronics
Allicdata Part #:

IRLS3036TRLPBFTR-ND

Manufacturer Part#:

IRLS3036TRLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 195A D2PAK
More Detail: N-Channel 60V 195A (Tc) 380W (Tc) Surface Mount D2...
DataSheet: IRLS3036TRLPBF datasheetIRLS3036TRLPBF Datasheet/PDF
Quantity: 1600
Stock 1600Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 380W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRLS3036TRLPBF, is a 30V high-drain N-channel MOSFET (metal-oxide semiconductor field effect transistor), and is part of a line of single MOSFETs from Infineon Technologies. The device is a surface mount package, and the transistor is designed for use in the load switch and demand load applications of low-voltage industrial systems.

The IRLS3036TRLPBF is fabricated with advanced trench technology, and a high cell density to increase its power capability. The MOSFET has a rugged body diode, fast switching times and low on resistance. It is specifically designed to perform in power supply devices and also in other applications that require a low RDS(ON) to reduce power losses and heat.

This single MOSFET is suitable for use in a wide range of applications, including AC-DC conversion, DC-DC conversion, LED lighting and other consumer electronics. It can also be used for embedded systems, DC motors, switch mode power supplies, solar cell systems and lighting systems with low voltage and current requirements.

The IRLS3036TRLPBF features a P-channel depletion mode design, which means that it operates in reverse polarity, allowing for higher output voltages and currents. The MOSFET has a maximum drain-source voltage of 30V, a drain current of 30A, and a maximum power dissipation rating of 50W. It also has a maximum junction temperature rating of 175°C and a gate-source voltage of ±20V.

The IRLS3036TRLPBF operates by allowing a flow of electrons through a conducting channel between the source and the drain. When a positive voltage is applied to the gate, it creates an electron depletion region, which allows the electrons to travel through the channel. This creates a current that flows from the source to the drain.

The IRLS3036TRLPBF also contains an avalanche diode, which is used to protect the MOSFET from electrostatic discharge. The diode is designed to protect the transistor from high voltage transients, so that it does not damage the device.

In conclusion, the IRLS3036TRLPBF is a single MOSFET, designed for use in load switch and demand load applications. It is suitable for use in a range of applications including AC-DC conversion, DC-DC conversion, LED lighting and other consumer electronics. It features a P-channel depletion mode design, which allows it to operate in reverse polarity, and it also contains an avalanche diode for additional protection.

The specific data is subject to PDF, and the above content is for reference

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