IRLS640A Allicdata Electronics
Allicdata Part #:

IRLS640AFS-ND

Manufacturer Part#:

IRLS640A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 200V 9.8A TO-220F
More Detail: N-Channel 200V 9.8A (Tc) 40W (Tc) Through Hole TO-...
DataSheet: IRLS640A datasheetIRLS640A Datasheet/PDF
Quantity: 2
Stock 2Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 180 mOhm @ 4.9A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRLS640A is a field-effect transistor (FET) manufactured by International Rectifier. It is a single-gate component, meaning it has only one control gate. This makes it suitable for a wide range of applications and makes it highly versatile.

The IRLS640A belongs to the metal oxide semiconductor field-effect transistor (MOSFET) type. It is a four-terminal device, meaning that it has four electrodes in order to sense and control current in a circuit. A gate, drain, source and body are the terminals of this particular type of transistor.

The IRLS640A has an unique feature called an internal gate resistance. This is an important feature that helps maintain stability between the drain and gate signals and keeps the device in an optimal operating state. This internal gate resistance is typically in the range of some tens of ohms; higher resistance means increased power handling.

The IRLS640A works according to the principle of the field-effect transistor. This means it relies on an electric field to control the current sent through the device. This field is generated through a voltage applied to the control gate, which controls the current between the source and drain. When the gate voltage increases, charge carriers flow more easily, resulting in a higher current flow.

The IRLS640A has several application fields, ranging from communications to industrial electronics. Its low operating voltage and low power consumption makes it highly desirable for communication systems. Its fast switching speeds and high bandwidth makes it ideal for signal processing applications, such as audio and video processing. Its high level input impedance and low noise characteristics make it suitable for power conditioning in industrial electronics.

The IRLS640A is a versatile single-gate FET with a wide range of applications. It uses an internal gate resistance to keep the device in an optimal operating state and relies on the field-effect principle to control the current between source and drain. This makes it suitable for a wide range of applications, such as communications, signal processing, and power conditioning in industrial electronics.

The specific data is subject to PDF, and the above content is for reference

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