MAGX-001090-700L00

The MAGX-001090-700L00 is a high voltage, high frequency field effect transistor (FET) that is used across a range of applications. It is a metal-oxide-semiconductor FET (MOSFET) and is suited for radio-frequency (RF) power applications.

These devices are voltage-controlled devices, meaning their operation is regulated by an external voltage. A gate terminal must be connected to the gate electrode of the FET in order to control the flow of current through the transistor’s channel. When the gate voltage (Vgs) is increased, it increases the resistance of the channel and reduces the current flow through the channel. When the gate voltage is decreased, it reduces the channel resistance and increases the current flow through the channel. This allows for the precise control of current flow, making it ideal for a number of applications.

The MAGX-001090-700L00 is designed to have a high breakdown voltage over a wide range of temperatures. It offers excellent thermal stability and power handling capabilities in an extremely small package size. These devices can be used in high-precision, high-frequency RF circuit applications, ranging from RF power amplifiers to RF distortion filters. This device is desirable for its high gain bandwidth, low noise figure, high breakdown voltage, and low insertion loss.

The operating principle of this device is based on the transmission of electrons in its channel. The electrons are attracted from the source (S) to the drain (D) by voltage, hence the name “voltage-controlled transistor”. When voltage is applied to the gate terminal (G) of the FET, it can control the flow of electrons in the channel, making it an excellent choice for precise control of current. Due to its high transconductance and high input capacitance, the MAGX-001090-700L00 is an ideal solution for RF circuit applications involving precise linear power amplification and RF distortion filtering.

Overall, the MAGX-001090-700L00 is an ideal solution for RF circuit applications such as RF power amplifiers and RF distortion filters. It is capable of precise linear power amplification and low noise operation due to its high transconductance and high input capacitance. This device provides excellent thermal stability and power handling capabilities in a very small package size and high breakdown voltage over a wide temperature range. Due to its operating principle based on the transmission of electrons in its channel and its voltage-controlled nature, this FET allows for precise control of the current flow, making it an ideal choice for RF circuit applications.