Allicdata Part #: | 1465-1082-ND |
Manufacturer Part#: |
MAGX-000912-125L00 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | TRANSISTOR GAN 125W 960-1215MHZ |
More Detail: | RF Mosfet HEMT 50V 100mA 960MHz ~ 1.215GHz 18.9dB ... |
DataSheet: | MAGX-000912-125L00 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | HEMT |
Frequency: | 960MHz ~ 1.215GHz |
Gain: | 18.9dB |
Voltage - Test: | 50V |
Current Rating: | 4A |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 125W |
Voltage - Rated: | 65V |
Package / Case: | -- |
Supplier Device Package: | -- |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MAGX-000912-125L00 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that is used for radio frequency (RF) applications. It is a 25V N-channel enhancement mode MOSFET with an on-resistance rating of 12 ohms and a maximum drain current of 5.0A. It has a Package Type of TO-220 and a Gate Charge of 1.2 nC.
MOSFETs are voltage-controlled transistors that are widely used for digital, analog, and switch-mode applications. They are used for a variety of different applications such as amplifiers and motor drives. MOSFETs also have the advantage of being very efficient and low power devices as compared to other types of transistors, such as bipolar transistors.
MOSFETs are used in RF applications because they offer a wide range of advantages over other types of transistors. They can provide excellent linearity and low distortion when linearizing or amplifying signals. MOSFETs also have high power handling capability. This makes them ideal for power amplifiers and power supplies. Additionally, they are highly immune to thermal and second breakdown, which makes them suitable for high voltage and power applications.
The working principle of the MAGX-000912-125L00 is relatively simple. When a positive voltage is applied to the gate, it creates an inversion layer and electron flow between the source and drain. This allows current to flow between the source and drain and creates an amplified output. When the drain current is increased, the voltage drop between the source and the gate increases, reducing the gate-source voltage and limiting the current. When the gate-source voltage is reduced, the current through the channel is reduced and the output is reduced.
The MAGX-000912-125L00 is a versatile device that can be used for a variety of digital and analog applications. Some of its common applications include radio frequency amplifiers and power supplies, switch-mode motors, high voltage switching applications, and analog signal conditioning. It is also used in power amplifiers, such as audio amplifiers and Class-B audio amplifiers.
The MAGX-000912-125L00 is an ideal device for RF applications due to its impressive performance capabilities, such as its high power handling capability and excellent linearity. Additionally, its small physical size makes it easy to use in a variety of applications. With its wide range of applications and impressive performance, the MAGX-000912-125L00 is a great choice for those looking for a reliable and efficient RF transistor.
The specific data is subject to PDF, and the above content is for reference
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