MAGX-000035-09000P

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Transistors - FETs, MOSFETs - RF

When the wireless industry requires more powerful devices, the need for the MAGX-000035-09000P RF MOSFET begins to appear. This device is a unique MOSFET that has been specifically designed for radio frequency applications. The MAGX-000035-09000P utilizes an alteration of the standard MOSFET technology to create a device that is suited to the needs of wireless transmission.

Application Field

The MAGX-000035-09000P is designed specifically to be used with RF applications such as cellular phones, radio transmitters, and microwave communication equipment. It is ideal for applications that require large power levels due to its low Wmax and high Pd. It is capable of meeting the stringent requirements of many wireless applications due to its reliability and small size. It is also a suitable choice for applications that require a wide range of input and output power levels.

Working Principle

A MOSFET is composed of three terminals - the gate, the source, and the drain. It works by utilizing a voltage between the gate and source to control the current between the source and the drain. When the gate voltage is increased, the channel between the source and the drain is opened and allows current to flow. This is known as operation in the saturation region. When the gate voltage is decreased, the channel between the source and the drain is closed and no current is allowed to flow. This is known as operation in the pinch-off region. The MAGX-000035-09000P utilizes this basic MOSFET principle but adds to its design to achieve the wide range of input and output power levels that are required for RF applications.

The MAGX-000035-09000P utilizes an improved MOSFET structure that includes an RF-optimized silicon gate oxide and an RF-optimized gate structure. These enhancements produce an improved low-frequency response and high-frequency isolation. In addition, the device\'s ion-implantation process is further enhanced to provide improved reverse pinch-off characteristics and improved packing density. All of these features result in increased performance in RF applications.

The MAGX-000035-09000P is a highly reliable RF MOSFET that is designed specifically for wireless applications. It utilizes an improved MOSFET technology to produce a device that is capable of meeting the requirements of many wireless applications. The device features a wide range of input and output power levels and is designed to have excellent reliability and small size. These features make the MAGX-000035-09000P an ideal choice for RF applications.

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