MAGX-002731-180L00 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MAGX-002731-180L00 is an n-channel enhancement-mode (normally-off) Field Effect Transistor (FET) designed specifically for radio frequency switching applications. The high gain and low noise features of this particular FET enable excellent performance in RF switches, making it ideal for use in a wide variety of applications.

The MAGX-002731-180L00 is a high performance, low-noise, silicon-gate MOSFET that is specifically designed for radio-frequency (RF) switching applications. This FET has an extremely low on-resistance (RON) of 0.4 ohms, which makes it well suited for use in RF switches. Additionally, the FET has a very low off-state current leakage of less than 10pA. This makes the FET ideally suited for use in low-noise switching applications. The FET also offers excellent reliability and thermal performance, making it an ideal choice for many RF switching applications.

The working principle of the MAGX-002731-180L00 is based on the basic MOSFET structure. The FET is composed of a source, a drain, a gate and a substrate. The source and drain are semiconductor materials and the gate is separated from them by a thin insulating layer. When a voltage is applied to the gate, a current is created in the FET which allows current to flow between the source and drain. By controlling the voltage applied to the gate, the channel created between the source and drain can be opened or closed depending on the voltage.

This FET is ideally suited for high-frequency switching applications because of its low threshold voltage (1.2V), low-noise and excellent reliability. Additionally, the FET is also resistant to electrostatic discharge (ESD) and EMI. The FET can be used in a variety of applications such as switching, detector and amplifier stages, power supplies and antenna switching.

The MAGX-002731-180L00 FET is an ideal choice for a wide range of RF switching applications. It has a low on-resistance (RON) of 0.4 ohms, a low on-state current leakage of less than 10pA, and excellent reliability and thermal performance. In addition, the FET offers excellent noise performance and EMI immunity, making it an ideal choice for low-noise RF switching applications.

The specific data is subject to PDF, and the above content is for reference